VQ1006P

VQ1006P-E3 vs VQ1006P vs VQ1006P-2

 
PartNumberVQ1006P-E3VQ1006PVQ1006P-2
DescriptionMOSFET Quad NCH 90V 4.5RMOSFET 4N-CH 90V 0.4A 14DIPMOSFET 4N-CH 90V 0.4A 14DIP
ManufacturerVishayVishay Siliconix-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CasePDIP-SB-14--
Height4.45 mm--
Length19.56 mm--
SeriesVN0808L/LS, VQ1006P--
Width7.87 mm--
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity25--
SubcategoryMOSFETs--
Unit Weight0.042329 oz0.042329 oz-
Packaging-Tube-
Package Case-PDIP-14-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-*-
Number of Channels-4 Channel-
Supplier Device Package-*-
Configuration-Quad-
FET Type-4 N-Channel-
Power Max-2W-
Transistor Type-4 N-Channel-
Drain to Source Voltage Vdss-90V-
Input Capacitance Ciss Vds-60pF @ 25V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-400mA-
Rds On Max Id Vgs-4.5 Ohm @ 1A, 10V-
Vgs th Max Id-2.5V @ 1mA-
Gate Charge Qg Vgs---
Pd Power Dissipation-1.3 W-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-400 mA-
Vds Drain Source Breakdown Voltage-90 V-
Rds On Drain Source Resistance-4 Ohms-
Transistor Polarity-N-Channel-
Channel Mode-Enhancement-
メーカー モデル 説明 RFQ
Vishay / Siliconix
Vishay / Siliconix
VQ1006P-E3 MOSFET Quad NCH 90V 4.5R
Vishay
Vishay
VQ1006P MOSFET 4N-CH 90V 0.4A 14DIP
VQ1006P-2 MOSFET 4N-CH 90V 0.4A 14DIP
VQ1006P-E3 MOSFET 4N-CH 90V 0.4A 14DIP
VQ1006P-1 ブランドニューオリジナル
VQ1006P-5 ブランドニューオリジナル
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