ZXM62P03E6 stock, ZXM62P03E6, ZXM62P03E6TA


PartNumber	ZXM62P03E6TA	ZXM62P03E6TC
Description	MOSFET 30V P-Chnl HDMOS	MOSFET 30V P Chnl HDMOS
Manufacturer	Diodes Incorporated	Diodes Incorporated
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	SOT-26-6	SOT-26-6
Number of Channels	1 Channel	1 Channel
Transistor Polarity	P-Channel	P-Channel
Vds Drain Source Breakdown Voltage	30 V	30 V
Id Continuous Drain Current	1.5 A	1.5 A
Rds On Drain Source Resistance	150 mOhms	230 mOhms
Vgs th Gate Source Threshold Voltage	1 V	-
Vgs Gate Source Voltage	10 V	12 V
Qg Gate Charge	10.2 nC	-
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	625 mW	625 mW
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Packaging	Reel	Reel
Height	1.3 mm	1.3 mm
Length	3.1 mm	3.1 mm
Product	MOSFET Small Signal	MOSFET Small Signal
Series	ZXM62P0	ZXM62
Transistor Type	1 P-Channel	1 P-Channel
Type	MOSFET	MOSFET
Width	1.8 mm	1.8 mm
Brand	Diodes Incorporated	Diodes Incorporated
Forward Transconductance Min	1.1 S	-
Fall Time	10.3 ns	6.4 ns
Product Type	MOSFET	MOSFET
Rise Time	6.4 ns	6.4 ns
Factory Pack Quantity	3000	10000
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	13.9 ns	13.9 ns
Typical Turn On Delay Time	2.8 ns	2.8 ns
Unit Weight	0.000529 oz	0.000529 oz

Search Part Number : "ZXM62P03E6", Match & Start with "ZXM62P03E6" - Total : 7

メーカー	モデル	説明
Diodes Incorporated	ZXM62P03E6TA	MOSFET 30V P-Chnl HDMOS
	ZXM62P03E6TC	MOSFET 30V P Chnl HDMOS
	ZXM62P03E6TA	IGBT Transistors MOSFET 30V P-Chnl HDMOS
	ZXM62P03E6TC	MOSFET 30V P Chnl HDMOS
	ZXM62P03E6	MOSFET, P CHANNEL, 30V, -1.5A, SOT-23, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.5A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.11ohm, Rds(on) Test Voltage Vgs:10V
	ZXM62P03E6CT	ブランドニューオリジナル
	ZXM62P03E6TA-CUT TAPE	ブランドニューオリジナル

ZXM62P03E6