NTGD4167CT1G

NTGD4167CT1G
Mfr. #:
NTGD4167CT1G
メーカー:
ON Semiconductor
説明:
IGBT Transistors MOSFET COMP 30V 2.9A 0.090 TSOP6
ライフサイクル:
メーカー新製品
データシート:
NTGD4167CT1G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー
の上
製品カテゴリ
FET-アレイ
シリーズ
NTGD4167C
包装
Digi-ReelR代替パッケージ
単位重量
0.000705 oz
取り付けスタイル
SMD / SMT
パッケージ-ケース
SOT-23-6 Thin, TSOT-23-6
テクノロジー
Si
作動温度
-55°C ~ 150°C (TJ)
取付タイプ
表面実装
チャネル数
2 Channel
サプライヤー-デバイス-パッケージ
6-TSOP
構成
NチャネルPチャネル
FETタイプ
NおよびPチャネル
パワーマックス
900mW
トランジスタタイプ
1 N-Channel 1 P-Channel
Drain-to-Source-Voltage-Vdss
30V
入力-静電容量-Ciss-Vds
295pF @ 15V
FET機能
ロジックレベルゲート
Current-Continuous-Drain-Id-25°C
2.6A, 1.9A
Rds-On-Max-Id-Vgs
90 mOhm @ 2.6A, 4.5V
Vgs-th-Max-Id
1.5V @ 250μA
ゲートチャージ-Qg-Vgs
5.5nC @ 4.5V
Pd-電力損失
1.1 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
4 ns 8 ns
立ち上がり時間
4 ns 8 ns
Vgs-Gate-Source-Voltage
12 V
Id-連続-ドレイン-電流
2.2 A
Vds-ドレイン-ソース-ブレークダウン-電圧
30 V
Rds-On-Drain-Source-Resistance
90 mOhms 170 mOhms
トランジスタ-極性
NチャネルPチャネル
典型的なターンオフ遅延時間
14 ns 22 ns
典型的なターンオン遅延時間
7 ns 8 ns
チャネルモード
強化
Tags
NTGD4167CT1, NTGD4167CT, NTGD4167C, NTGD4167, NTGD4, NTGD, NTG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
NTGD4167CT1G N/P-channel MOSFET Transistor; 2.2 A; 2.9 A; 30 V; 6-Pin TSOP
***th Star Micro
NTGD4167C: Small Signal MOSFET 30V 2.6A 90 mOhm Dual Complementary TSOP-6
***ure Electronics
Dual Channel N & P 30 V 90 mOhm 900 mW Surface Mount Power Mosfet - TSOP-6
***et Europe
Trans MOSFET N/P-CH 30V 2.2A 6-Pin TSOP T/R
***Semiconductor
Complementary Power MOSFET 30V, 2.6A, 90mΩ
*** Source Electronics
MOSFET N/P-CH 30V 6-TSOP
***ark
COMP TSOP6 30V 2.9A 0.090
***Components
ON Semiconductor, NTGD4167CT1G
***ment14 APAC
Prices include import duty and tax. MOSFET, N AND P CH, 30V, 2.6A, TSOP-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:900mW; Transistor Case Style:TSOP; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN-P E N, 30V, 2.6A, TSOP-6; Polarità Transistor:Canale N e P; Corrente Continua di Drain Id:2.6A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.052ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:900mV; Dissipazione di Potenza Pd:900mW; Modello Case Transistor:TSOP; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
モデル メーカー 説明 ストック 価格
NTGD4167CT1G
DISTI # NTGD4167CT1GOSTR-ND
ON SemiconductorMOSFET N/P-CH 30V 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.1598
NTGD4167CT1G
DISTI # NTGD4167CT1GOSCT-ND
ON SemiconductorMOSFET N/P-CH 30V 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.1805
  • 500:$0.2336
  • 100:$0.3185
  • 10:$0.4250
  • 1:$0.5000
NTGD4167CT1G
DISTI # NTGD4167CT1GOSDKR-ND
ON SemiconductorMOSFET N/P-CH 30V 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.1805
  • 500:$0.2336
  • 100:$0.3185
  • 10:$0.4250
  • 1:$0.5000
NTGD4167CT1G
DISTI # NTGD4167CT1G
ON SemiconductorTrans MOSFET N/P-CH 30V 2.2A 6-Pin TSOP T/R (Alt: NTGD4167CT1G)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel
Asia - 0
    NTGD4167CT1G
    DISTI # NTGD4167CT1G
    ON SemiconductorTrans MOSFET N/P-CH 30V 2.2A 6-Pin TSOP T/R - Tape and Reel (Alt: NTGD4167CT1G)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 3000:$0.1109
    • 6000:$0.1109
    • 12000:$0.1089
    • 18000:$0.1079
    • 30000:$0.1049
    NTGD4167CT1G
    DISTI # 81Y7039
    ON SemiconductorMOSFET, N AND P CH, 30V, 2.6A, TSOP-6,Transistor Polarity:N and P Channel,Continuous Drain Current Id:2.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):52mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:900mV,, RoHS Compliant: Yes0
    • 1:$0.4100
    • 10:$0.3390
    • 25:$0.2950
    • 50:$0.2510
    • 100:$0.2070
    • 250:$0.1910
    • 500:$0.1760
    • 1000:$0.1600
    NTGD4167CT1G
    DISTI # 95M6993
    ON SemiconductorDUAL N/P CHANNEL MOSFET, 30V, TSOP,Continuous Drain Current Id:2.6A,Continuous Drain Current Id, N Channel:2.6A,Continuous Drain Current Id, P Channel:-1.9A,Drain Source Voltage Vds:30V,Drain Source Voltage Vds, N Channel:30V , RoHS Compliant: Yes0
    • 1:$0.6090
    • 50:$0.4030
    • 100:$0.2250
    • 250:$0.2190
    • 500:$0.2120
    • 1000:$0.1460
    • 6000:$0.1360
    • 18000:$0.1330
    NTGD4167CT1G
    DISTI # 70341324
    ON SemiconductorNTGD4167CT1G N/P-channel MOSFET Transistor,2.2 A,2.9 A,30 V,6-Pin TSOP
    RoHS: Compliant
    0
    • 50:$0.3600
    • 125:$0.3560
    • 250:$0.3530
    • 500:$0.3490
    NTGD4167CT1G
    DISTI # 863-NTGD4167CT1G
    ON SemiconductorMOSFET COMP 30V 2.9A 0.090 TSOP6
    RoHS: Compliant
    0
    • 1:$0.4100
    • 10:$0.3390
    • 100:$0.2070
    • 1000:$0.1600
    • 3000:$0.1360
    • 9000:$0.1270
    NTGD4167CT1G
    DISTI # 2533185
    ON SemiconductorMOSFET, N AND P CH, 30V, 2.6A, TSOP-6
    RoHS: Compliant
    0
    • 5:£0.2940
    • 25:£0.2810
    • 100:£0.1590
    • 250:£0.1410
    • 500:£0.1220
    NTGD4167CT1G
    DISTI # 2533185
    ON SemiconductorMOSFET, N AND P CH, 30V, 2.6A, TSOP-6
    RoHS: Compliant
    0
    • 1:$0.6490
    • 10:$0.5370
    • 100:$0.3280
    • 1000:$0.2540
    • 3000:$0.2160
    • 9000:$0.2010
    画像 モデル 説明
    NTGD4169FT1G

    Mfr.#: NTGD4169FT1G

    OMO.#: OMO-NTGD4169FT1G

    MOSFET FETKY 30V 2.6A 90MO TSOP6
    NTGD4161PT1G

    Mfr.#: NTGD4161PT1G

    OMO.#: OMO-NTGD4161PT1G

    MOSFET PFET TSOP6 20V 2.3A 160mOhm
    NTGD4167CT1G

    Mfr.#: NTGD4167CT1G

    OMO.#: OMO-NTGD4167CT1G

    MOSFET COMP 30V 2.9A 0.090 TSOP6
    NTGD4161PT1G

    Mfr.#: NTGD4161PT1G

    OMO.#: OMO-NTGD4161PT1G-ON-SEMICONDUCTOR

    MOSFET 2P-CH 30V 1.5A 6-TSOP
    NTGD4167C

    Mfr.#: NTGD4167C

    OMO.#: OMO-NTGD4167C-1190

    ブランドニューオリジナル
    NTGD4167CT1

    Mfr.#: NTGD4167CT1

    OMO.#: OMO-NTGD4167CT1-1190

    ブランドニューオリジナル
    NTGD4167CT1G   SI3590DV-

    Mfr.#: NTGD4167CT1G SI3590DV-

    OMO.#: OMO-NTGD4167CT1G-SI3590DV--1190

    ブランドニューオリジナル
    NTGD4167CTTGR

    Mfr.#: NTGD4167CTTGR

    OMO.#: OMO-NTGD4167CTTGR-1190

    ブランドニューオリジナル
    NTGD4167PT1G

    Mfr.#: NTGD4167PT1G

    OMO.#: OMO-NTGD4167PT1G-1190

    ブランドニューオリジナル
    NTGD4167CT1G

    Mfr.#: NTGD4167CT1G

    OMO.#: OMO-NTGD4167CT1G-ON-SEMICONDUCTOR

    IGBT Transistors MOSFET COMP 30V 2.9A 0.090 TSOP6
    可用性
    ストック:
    Available
    注文中:
    3500
    数量を入力してください:
    NTGD4167CT1Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $0.15
    $0.15
    10
    $0.14
    $1.42
    100
    $0.13
    $13.49
    500
    $0.13
    $63.70
    1000
    $0.12
    $119.90
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