DN2625DK6-G

Mfr. #:: DN2625DK6-G
メーカー:: Microchip Technology
説明:: IGBT Transistors MOSFET N-CHANNEL DEPLETION MODE
ライフサイクル:: メーカー新製品
データシート:: DN2625DK6-G データシート
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ECAD Model:
詳しくは:: DN2625DK6-G 詳しくは DN2625DK6-G Product Details

製品属性
属性値

メーカー: マイクロチップテクノロジー

製品カテゴリ: FET-アレイ

シリーズ: -

包装: トレイ

単位重量: 0.001319 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: 8-VDFN Exposed Pad

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: 8-DFN (5x5)

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: -

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 250V

入力-静電容量-Ciss-Vds: 1000pF @ 25V

FET機能: 枯渇モード

Current-Continuous-Drain-Id-25°C: 1.1A

Rds-On-Max-Id-Vgs: 3.5 Ohm @ 1A, 0V

Vgs-th-Max-Id: -

ゲートチャージ-Qg-Vgs: 7.04nC @ 1.5V

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 20 ns

立ち上がり時間: 20 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 1.1 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 250 V

Rds-On-Drain-Source-Resistance: 3.5 Ohms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 10 ns

典型的なターンオン遅延時間: 10 ns

Qg-Gate-Charge: 7.04 nC

チャネルモード: 枯渇

Tags: DN2625, DN262, DN26, DN2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DN2625DK6-G 説明

***ied Electronics & Automation: MOSFET; DEPLETION-MODE; 250V; 3.5 Ohm8 VDFN 5x5x1.0mm TRAY

***ical: Trans MOSFET N-CH Si 250V 1.1A 8-Pin DFN EP Tray

*** Source Electronics: N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options

Market price

モデル	メーカー	説明	ストック	価格
DN2625DK6-G DISTI # V99:2348_06429061	Microchip Technology Inc	Trans MOSFET N-CH Si 250V 1.1A 8-Pin DFN EP	278	490:$1.9680
DN2625DK6-G DISTI # DN2625DK6-G-ND	Microchip Technology Inc	MOSFET 2N-CH 250V 1.1A 8VDFN RoHS: Compliant Min Qty: 1 Container: Tray	946In Stock	100:$1.9611 25:$2.1320 1:$2.5600
DN2625DK6-G DISTI # 25847747	Microchip Technology Inc	Trans MOSFET N-CH Si 250V 1.1A 8-Pin DFN EP	278	3:$1.9680
DN2625DK6-G DISTI # DN2625DK6-G	Microchip Technology Inc	Trans MOSFET N-CH 250V 1.1A 8-Pin DFN EP (Alt: DN2625DK6-G) RoHS: Compliant Min Qty: 490	Europe - 0	490:€2.3900 980:€2.2900 1960:€2.1900 2940:€1.9900 4900:€1.8900
DN2625DK6-G DISTI # DN2625DK6-G	Microchip Technology Inc	Trans MOSFET N-CH 250V 1.1A 8-Pin DFN EP - Trays (Alt: DN2625DK6-G) RoHS: Compliant Min Qty: 490 Container: Tray	Americas - 0	490:$2.1900 980:$2.0900 1960:$2.0900 2940:$1.9900 4900:$1.9900
DN2625DK6-G DISTI # 67X5077	Microchip Technology Inc	MOSFET, DEPLETION-MODE, 250V, 3.5 Ohm, 8 VDFN 5x5x1.0mm TRAY	0	1:$2.5600 25:$2.1300 100:$1.9400
DN2625DK6-G DISTI # 70453738	Microchip Technology Inc	MOSFET,DEPLETION-MODE,250V,3.5 Ohm8 VDFN 5x5x1.0mm TRAY RoHS: Compliant	0	490:$2.6400
DN2625DK6-G DISTI # 689-DN2625DK6-G	Microchip Technology Inc	MOSFET N-CHANNEL DEPLETION MODE RoHS: Compliant	0	1:$2.5700 10:$2.5300 25:$2.1400 100:$1.9400
DN2625DK6-G M932 DISTI # 689-DN2625DK6-G-M932	Microchip Technology Inc	MOSFET N-Channel MOSFET 250V 8-Pin RoHS: Compliant	0	1:$5.2300 10:$4.3600 25:$3.6300 100:$3.3000
DN2625DK6-G DISTI # DN2625DK6-G	Microchip Technology Inc	MOSFETDEPLETION-MODE250V3.5 Ohm RoHS: Compliant	760	1000:$1.8200 100:$1.8800 26:$2.0700 1:$2.4900
DN2625DK6-G	Microchip Technology Inc		3675 In Stock	980:$1.6200 490:$1.6800 100:$1.7100 25:$1.7500 15:$1.7800
DN2625DK6-G DISTI # 9163725P	Microchip Technology Inc	MOSFET N-CH 3.3A 250V 3.5 OHM DFN-8, PU	490	10:£1.8240 25:£1.6240 100:£1.4700
DN2625DK6-G DISTI # DN2625DK6-G	Supertex Inc	Transistor: N-MOSFET,unipolar,250V,1.1A,DFN8	480	1:$2.6800 3:$2.4600 10:$2.2500 100:$2.0600
DN2625DK6-G DISTI # DN2625DK6G	Microchip Technology Inc		3675	15:$1.7800 25:$1.7500 100:$1.7100 490:$1.6800 980:$1.6200
DN2625DK6-G DISTI # C1S505200898898	Microchip Technology Inc	MOSFETs	278	490:$1.9800

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