T1G4004532-FS

T1G4004532-FS
Mfr. #:
T1G4004532-FS
メーカー:
Qorvo
説明:
RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
ライフサイクル:
メーカー新製品
データシート:
T1G4004532-FS データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
T1G4004532-FS 詳しくは
製品属性
属性値
メーカー:
カーボ
製品カテゴリ:
RFJFETトランジスタ
JBoss:
Y
テクノロジー:
GaN SiC
Vds-ドレイン-ソース間降伏電圧:
32 V
Vgs-ゲート-ソース間降伏電圧:
100 V
Pd-消費電力:
45 W
取り付けスタイル:
SMD / SMT
包装:
トレイ
構成:
独身
高さ:
4.064 mm
長さ:
9.652 mm
幅:
5.842 mm
ブランド:
カーボ
ゲート-ソースカットオフ電圧:
- 2.9 V
感湿性:
はい
製品タイプ:
RFJFETトランジスタ
ファクトリーパックの数量:
50
サブカテゴリ:
トランジスタ
パーツ番号エイリアス:
1092444
Tags
T1G4004, T1G400, T1G4, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 45 W, 19 dB, 32V, GaN
T1G4004532 GaN RF Power Transistors
Qorvo T1G4004532 GaN RF Power Transistors are 45W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. The device is constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
モデル メーカー 説明 ストック 価格
T1G4004532-FS
DISTI # 772-T1G4004532-FS
QorvoRF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
RoHS: Compliant
37
  • 1:$220.0000
  • 25:$198.5500
T1G4004532-FS-EVB1
DISTI # 772-T1G4004532-FS-EB
QorvoRF Development Tools DC-35.GHz GaN Eval Board
RoHS: Compliant
2
  • 1:$875.0000
画像 モデル 説明
T1G4004532-FS

Mfr.#: T1G4004532-FS

OMO.#: OMO-T1G4004532-FS

RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G4004532-FL

Mfr.#: T1G4004532-FL

OMO.#: OMO-T1G4004532-FL

RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G4004532-FL

Mfr.#: T1G4004532-FL

OMO.#: OMO-T1G4004532-FL-318

RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G4004532-FS

Mfr.#: T1G4004532-FS

OMO.#: OMO-T1G4004532-FS-318

RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G40020036-FL

Mfr.#: T1G40020036-FL

OMO.#: OMO-T1G40020036-FL-1190

ブランドニューオリジナル
T1G4003532

Mfr.#: T1G4003532

OMO.#: OMO-T1G4003532-1190

ブランドニューオリジナル
T1G4003532-FL

Mfr.#: T1G4003532-FL

OMO.#: OMO-T1G4003532-FL-1152

RF JFET Transistors DC-3.5GHz 35Watt 32Volt GaN
T1G4003532-FS

Mfr.#: T1G4003532-FS

OMO.#: OMO-T1G4003532-FS-1152

RF JFET Transistors DC-3.5GHz 35Watt 32Volt GaN
T1G4004532-FS-EVB1

Mfr.#: T1G4004532-FS-EVB1

OMO.#: OMO-T1G4004532-FS-EVB1-1152

RF Development Tools DC-35.GHz GaN Eval Board
T1G4005528-FS-EVB1

Mfr.#: T1G4005528-FS-EVB1

OMO.#: OMO-T1G4005528-FS-EVB1-1152

RF Development Tools DC-3.5GHz 28Volt Eval Board
可用性
ストック:
37
注文中:
2020
数量を入力してください:
T1G4004532-FSの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$220.00
$220.00
25
$198.55
$4 963.75
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