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FGA30T65SHD

FGA30T65SHD
Mfr. #:
FGA30T65SHD
メーカー:
ON Semiconductor / Fairchild
説明:
IGBT Transistors FS3TIGBT TO3PN 30A 650V
ライフサイクル:
メーカー新製品
データシート:
FGA30T65SHD データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
FGA30T65SHD 詳しくは
製品属性
属性値
メーカー：
オン・セミコンダクター
製品カテゴリ：
IGBTトランジスタ
JBoss：
Y
テクノロジー：
Si
パッケージ/ケース：
TO-3PN
取り付けスタイル：
スルーホール
コレクター-エミッター電圧VCEOMax：
650 V
コレクター-エミッター飽和電圧：
2.14 V
最大ゲートエミッタ電圧：
30 V
25℃での連続コレクタ電流：
60 A
Pd-消費電力：
238 W
最低動作温度：
- 55 C
最高作動温度：
+ 175 C
シリーズ：
FGA30T65SHD
包装：
チューブ
連続コレクタ電流IcMax：
60 A
ブランド：
オン・セミコンダクター/フェアチャイルド
ゲートエミッタリーク電流：
400 nA
製品タイプ：
IGBTトランジスタ
ファクトリーパックの数量：
450
サブカテゴリ：
IGBT
単位重量：
0.225789 oz
Tags
FGA30, FGA3, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 650V 60A 238000mW 3-Pin(3+Tab) TO-3PN Rail
***nell
FIELD STOP TRENCH IGBT, 650V/60A, TO-3PN; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 238W; Collector Emitter Voltage V(br)ceo: 6; Available until stocks are exhausted
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-3PN Tube
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
*** Electronics
IGBT Transistors 650V 30A FS Planar Gen2 IGBT
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***el Electronic
IC REG LINEAR POS ADJ 1A TO252-5
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ure Electronics
STGP30M65DF2: 650 V 60 A 258 W Trench Gate Field-Stop IGBT - TO-220AB
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-220AB Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***el Electronic
STMICROELECTRONICS STGP30M65DF2 IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-220, 3 Pins
***nell
IGBT, SINGLE, 650V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pi
***ical
Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin(3+Tab) TO-220 Tube
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 30 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***ical
Trans IGBT Chip N-CH 650V 60A 58000mW 3-Pin(3+Tab) TO-3PF Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***S
French Electronic Distributor since 1988
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247AB
***emi
650V, 30A Field Stop Trench IGBT
***rchild Semiconductor
Using novel field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performancefor solar inverter , UPS and digital power generator where low conduction and switching losses are essential.
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***ark
650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
モデル メーカー 説明 ストック 価格
FGA30T65SHD
DISTI # V99:2348_06359719		ON Semiconductor650V FS GEN3 TRENCH IGBT439
  • 5000:$1.7290
  • 2500:$1.7880
  • 1000:$1.8710
  • 500:$2.1589
  • 250:$2.3609
  • 100:$2.4710
  • 10:$2.7740
  • 1:$3.1620
FGA30T65SHD
DISTI # FGA30T65SHD-ND		ON SemiconductorIGBT 650V 60A 238W TO-3PN
RoHS: Compliant
Min Qty: 1
Container: Tube		365In Stock
  • 1350:$2.0286
  • 900:$2.4053
  • 450:$2.6806
  • 10:$3.4490
  • 1:$3.8400
FGA30T65SHD
DISTI # 26983406		ON Semiconductor650V FS GEN3 TRENCH IGBT9900
  • 450:$3.6600
FGA30T65SHD
DISTI # 25845376		ON Semiconductor650V FS GEN3 TRENCH IGBT439
  • 250:$2.3609
  • 100:$2.4710
  • 10:$2.7740
  • 4:$3.1620
FGA30T65SHD
DISTI # FGA30T65SHD		ON SemiconductorTrans IGBT Chip N-CH 650V 60A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA30T65SHD)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.7900
  • 900:$1.6900
  • 1800:$1.6900
  • 2700:$1.6900
  • 4500:$1.6900
FGA30T65SHD
DISTI # FGA30T65SHD		ON SemiconductorTrans IGBT Chip N-CH 650V 60A 3-Pin TO-3PN Tube (Alt: FGA30T65SHD)
RoHS: Compliant
Min Qty: 450
Container: Tube		Asia - 0
    FGA30T65SHDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor
    RoHS: Compliant    		450
    • 1000:$2.2500
    • 500:$2.3700
    • 100:$2.4700
    • 25:$2.5700
    • 1:$2.7700
    FGA30T65SHD
    DISTI # 512-FGA30T65SHD    		ON SemiconductorIGBT Transistors FS3TIGBT TO3PN 30A 650V
    RoHS: Compliant    		263
    • 1:$3.6600
    • 10:$3.1100
    • 100:$2.7000
    • 250:$2.5600
    • 500:$2.3000
    • 1000:$1.9400
    • 2500:$1.8400
    FGA30T65SHDON SemiconductorINSTOCK6433
      FGA30T65SHDON Semiconductor 7200
      • 1:$5.3100
      • 100:$3.3900
      • 500:$2.8000
      • 1000:$2.5700
      FGA30T65SHD
      DISTI # C1S541901550127      		ON SemiconductorTrans IGBT Chip N-CH 650V 60A 238000mW 3-Pin(3+Tab) TO-3PN Tube
      RoHS: Compliant      		450
      • 250:$2.3609
      • 100:$2.4710
      • 10:$2.7740
      • 1:$3.1620
      FGA30T65SHD
      DISTI # 2781482      		ON SemiconductorFIELD STOP TRENCH IGBT, 650V/60A, TO-3PN
      RoHS: Compliant      		450
      • 1:$6.0800
      • 10:$5.4600
      • 450:$4.2500
      • 900:$3.8100
      • 1350:$3.2100
      FGA30T65SHD
      DISTI # 2781482      		ON SemiconductorFIELD STOP TRENCH IGBT, 650V/60A, TO-3PN
      RoHS: Compliant      		450
      • 1:£3.1100
      • 10:£2.3500
      • 100:£2.0500
      • 250:£1.9400
      • 500:£1.7400
      画像 モデル 説明
      FGA30N60LSDTU

      Mfr.#: FGA30N60LSDTU

      OMO.#: OMO-FGA30N60LSDTU

      		 IGBT Transistors 30A 600V N-Ch Planar
      FGA30N120FTDTU

      Mfr.#: FGA30N120FTDTU

      OMO.#: OMO-FGA30N120FTDTU

      		 IGBT Transistors 1200V 30A FS
      FGA30T65SHD

      Mfr.#: FGA30T65SHD

      OMO.#: OMO-FGA30T65SHD

      		 IGBT Transistors FS3TIGBT TO3PN 30A 650V
      FGA30S120P

      Mfr.#: FGA30S120P

      OMO.#: OMO-FGA30S120P-ON-SEMICONDUCTOR

      		 IGBT Transistors Shorted AnodeTM IGBT
      FGA30N65SMD

      Mfr.#: FGA30N65SMD

      OMO.#: OMO-FGA30N65SMD-ON-SEMICONDUCTOR

      		 IGBT Transistors 650V 30A FS Planar Gen2 IGBT
      FGA30N60LSDTU

      Mfr.#: FGA30N60LSDTU

      OMO.#: OMO-FGA30N60LSDTU-ON-SEMICONDUCTOR

      		 IGBT Transistors 30A 600V N-Ch Plana
      FGA304638G

      Mfr.#: FGA304638G

      OMO.#: OMO-FGA304638G-1190

      		 ブランドニューオリジナル
      FGA30N120

      Mfr.#: FGA30N120

      OMO.#: OMO-FGA30N120-1190

      		 ブランドニューオリジナル
      FGA30N120A

      Mfr.#: FGA30N120A

      OMO.#: OMO-FGA30N120A-1190

      		 ブランドニューオリジナル
      FGA30N120FTD

      Mfr.#: FGA30N120FTD

      OMO.#: OMO-FGA30N120FTD-1190

      		 ブランドニューオリジナル
      可用性
      ストック:
      263
      注文中:
      2246
      数量を入力してください:
      FGA30T65SHDの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格（USD）
      量
      単価
      小計金額
      1
      $3.65
      $3.65
      10
      $3.10
      $31.00
      100
      $2.69
      $269.00
      250
      $2.55
      $637.50
      500
      $2.29
      $1 145.00
      1000
      $1.93
      $1 930.00
      2500
      $1.83
      $4 575.00
      5000
      $1.76
      $8 800.00
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