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BSC080N03MS G

BSC080N03MS G
Mfr. #:
BSC080N03MS G
メーカー:
Infineon Technologies
説明:
Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC080N03MS G)
ライフサイクル:
メーカー新製品
データシート:
BSC080N03MS G データシート
配達:
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ECAD Model:
詳しくは:
BSC080N03MS G 詳しくは
製品属性
属性値
メーカー
I
製品カテゴリ
FET-シングル
シリーズ
OptiMOS 3M
包装
リール
パーツエイリアス
BSC080N03MSGATMA1 BSC080N03MSGXT SP000311514
取り付けスタイル
SMD / SMT
商標名
OptiMOS
パッケージ-ケース
TDSON-8
テクノロジー
Si
チャネル数
1 Channel
構成
シングルクワッドドレイントリプルソース
トランジスタタイプ
1 N-Channel
Pd-電力損失
2.5 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
5.6 ns
立ち上がり時間
5.4 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
13 A
Vds-ドレイン-ソース-ブレークダウン-電圧
30 V
Rds-On-Drain-Source-Resistance
8 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
10 ns
典型的なターンオン遅延時間
10 ns
チャネルモード
強化
Tags
BSC080N03M, BSC080N, BSC080, BSC08, BSC0, BSC
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
モデル メーカー 説明 ストック 価格
BSC080N03MSGATMA1
DISTI # V72:2272_06390943		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 3000:$0.2529
  • 1000:$0.2728
  • 500:$0.3105
  • 250:$0.3369
  • 100:$0.3609
  • 25:$0.4357
  • 10:$0.4454
  • 1:$0.5234
BSC080N03MSGATMA1
DISTI # BSC080N03MSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		779In Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC080N03MSGATMA1
DISTI # BSC080N03MSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		779In Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC080N03MSGATMA1
DISTI # BSC080N03MSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.2692
BSC080N03MSGATMA1
DISTI # 31084156		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 3000:$0.2544
  • 1000:$0.2745
  • 500:$0.3114
  • 250:$0.3342
  • 100:$0.3579
  • 32:$0.4327
BSC080N03MS G
DISTI # BSC080N03MS G		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC080N03MS G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC080N03MSGATMA1
    DISTI # BSC080N03MSGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP - Tape and Reel (Alt: BSC080N03MSGATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.2079
    • 10000:$0.2009
    • 20000:$0.1939
    • 30000:$0.1869
    • 50000:$0.1839
    BSC080N03MSGATMA1
    DISTI # 60R2503    		Infineon Technologies AGMOSFET, N CHANNEL, 30V, 53A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:53A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
      BSC080N03MSGInfineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		9791
      • 1000:$0.2400
      • 500:$0.2500
      • 100:$0.2600
      • 25:$0.2700
      • 1:$0.2900
      BSC080N03MSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		5000
      • 1000:$0.2200
      • 500:$0.2400
      • 100:$0.2500
      • 25:$0.2600
      • 1:$0.2800
      BSC080N03MS G
      DISTI # 726-BSC080N03MSG      		Infineon Technologies AGMOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M
      RoHS: Compliant      		0
      • 1:$0.6800
      • 10:$0.5620
      • 100:$0.3630
      • 1000:$0.2910
      BSC080N03MSGATMA1
      DISTI # 7545288P      		Infineon Technologies AGMOSFET N-CHANNEL 30V 13A OPTIMOS3 TDSON8, RL1620
      • 25:£0.1560
      BSC080N03MSGATMA1
      DISTI # BSC080N03MSGATMA1      		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,53A,35W,PG-TDSON-8550
      • 3:$0.4264
      • 25:$0.3763
      • 100:$0.3156
      • 250:$0.2732
      • 1000:$0.2537
      BSC080N03MSGInfineon Technologies AG 114
        BSC080N03MSGATMA1
        DISTI # C1S322000595914        		Infineon Technologies AGMOSFETs
        RoHS: Compliant        		5000
        • 250:$0.3443
        • 100:$0.3708
        • 25:$0.4437
        • 10:$0.4539
        BSC080N03MSGATMA1
        DISTI # 1775456        		Infineon Technologies AGMOSFET, N CH, 53A, 30V, PG-TDSON-8
        RoHS: Compliant        		0
        • 1:$1.0800
        • 10:$0.8900
        • 100:$0.5750
        • 1000:$0.4610
        • 5000:$0.3900
        BSC080N03MSGInfineon Technologies AG30V,8m,53A,N-Channel Power MOSFET100
        • 1:$0.4200
        • 100:$0.3500
        • 500:$0.3100
        • 1000:$0.3000
        画像 モデル 説明
        BSC080N03LS

        Mfr.#: BSC080N03LS

        OMO.#: OMO-BSC080N03LS-1190

        		 ブランドニューオリジナル
        BSC080N03LS G

        Mfr.#: BSC080N03LS G

        OMO.#: OMO-BSC080N03LS-G-1190

        		 Trans MOSFET N-CH 30V 14A 8-Pin TDSON T/R (Alt: BSC080N03LS G)
        BSC080N03LSG

        Mfr.#: BSC080N03LSG

        OMO.#: OMO-BSC080N03LSG-1190

        		 14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
        BSC080N03MS G

        Mfr.#: BSC080N03MS G

        OMO.#: OMO-BSC080N03MS-G-1190

        		 Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC080N03MS G)
        BSC080N03MSGATMA1

        Mfr.#: BSC080N03MSGATMA1

        OMO.#: OMO-BSC080N03MSGATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 53A TDSON-8
        BSC080N03NMS

        Mfr.#: BSC080N03NMS

        OMO.#: OMO-BSC080N03NMS-1190

        		 ブランドニューオリジナル
        BSC080P03LS

        Mfr.#: BSC080P03LS

        OMO.#: OMO-BSC080P03LS-1190

        		 Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        BSC080P03LS G

        Mfr.#: BSC080P03LS G

        OMO.#: OMO-BSC080P03LS-G-1190

        		 MOSFET P-Ch -30V 16A TDSON-8 OptiMOS P
        BSC080P03LSG

        Mfr.#: BSC080P03LSG

        OMO.#: OMO-BSC080P03LSG-1190

        		 Trans MOSFET P-CH 30V 16A 8-Pin TDSON T/R (Alt: BSC080P03LS G)
        BSC080P03LSGAUMA1

        Mfr.#: BSC080P03LSGAUMA1

        OMO.#: OMO-BSC080P03LSGAUMA1-INFINEON-TECHNOLOGIES

        		 MOSFET P-CH 30V 30A TDSON-8
        可用性
        ストック:
        Available
        注文中:
        4000
        数量を入力してください:
        BSC080N03MS Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
        参考価格（USD）
        量
        単価
        小計金額
        1
        $0.44
        $0.44
        10
        $0.41
        $4.15
        100
        $0.39
        $39.29
        500
        $0.37
        $185.50
        1000
        $0.35
        $349.20
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