PGA26E07BA

Mfr. #:: PGA26E07BA
メーカー:: Panasonic
説明:: MOSFET MOSFET 600VDC 70mohm X-GaN
ライフサイクル:: メーカー新製品
データシート:: PGA26E07BA データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: PGA26E07BA 詳しくは

製品属性
属性値

Tags: PGA26E0, PGA26, PGA2, PGA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PGA26E07BA 説明

***asonic SCT: GaN Power Devices, 600V, DFN 8x8, RoHS

PGA26E07BA 詳しくは

PGA26E X-GaN Power Transistors: Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.

X-GaN Power Solutions: Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.

Market price

モデル	メーカー	説明	ストック	価格
PGA26E07BA DISTI # 667-PGA26E07BA	Panasonic Electronic Components	MOSFET MOSFET 600VDC 70mohm X-GaN RoHS: Compliant	29	1:$35.4300 10:$33.4600 25:$31.4900
PGA26E07BA-SWEVB008 DISTI # 667-PGA26E07BASWEV8	Panasonic Electronic Components	Power Management IC Development Tools 600Vdc 70mOhm X-GaN 1/2 Bridge EVB RoHS: Compliant	15	1:$400.0000
PGA26E07BA-SWEVB006 DISTI # 667-PGA26E07BASWEVB6	Panasonic Electronic Components	Power Management IC Development Tools 600Vdc 70mOhm X-GaN Chopper EVB RoHS: Compliant	2	1:$375.0000
PGA26E07BA-DB001 DISTI # 667-PGA26E07BADAB001	Panasonic Electronic Components	Power Management IC Development Tools SMD-ThruHole ConvKit 600VDC 70mohm X-GaN RoHS: Compliant	0	1:$55.0000

関連製品

画像	モデル	説明
	Mfr.#: PGA26E19BA OMO.#: OMO-PGA26E19BA	MOSFET MOSFET 600VDC 190mohm X-GaN
	Mfr.#: PGA26E07BA OMO.#: OMO-PGA26E07BA	MOSFET MOSFET 600VDC 70mohm X-GaN
	Mfr.#: PGA26E07-DB001 OMO.#: OMO-PGA26E07-DB001-1190	ブランドニューオリジナル
	Mfr.#: PGA26E07-SWEVB008 OMO.#: OMO-PGA26E07-SWEVB008-1190	ブランドニューオリジナル
	Mfr.#: PGA26E07BA OMO.#: OMO-PGA26E07BA-1190	MOSFET MOSFET 600VDC 70mohm X-GaN
	Mfr.#: PGA26E19-DB001 OMO.#: OMO-PGA26E19-DB001-1190	ブランドニューオリジナル
	Mfr.#: PGA26E19-SWEVB008 OMO.#: OMO-PGA26E19-SWEVB008-1190	ブランドニューオリジナル
	Mfr.#: PGA26E19BA OMO.#: OMO-PGA26E19BA-1190	MOSFET MOSFET 600VDC 190mohm X-GaN