NE3515S02-T1C-A

NE3515S02-T1C-A
Mfr. #:
NE3515S02-T1C-A
メーカー:
CEL
説明:
RF JFET Transistors Super Low Noise Pseudomorphic
ライフサイクル:
メーカー新製品
データシート:
NE3515S02-T1C-A データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー
ルネサス
製品カテゴリ
RFFET
包装
リール
取り付けスタイル
SMD / SMT
パッケージ-ケース
S0-2
テクノロジー
GaAs
トランジスタタイプ
pHEMT
利得
12.5 dB
Pd-電力損失
165 mW
最高作動温度
+ 125 C
動作周波数
12 GHz
Id-連続-ドレイン-電流
88 mA
Vds-ドレイン-ソース-ブレークダウン-電圧
4 V
フォワード-相互コンダクタンス-最小
70 mS
Vgs-ゲート-ソース-ブレークダウン-電圧
- 3 V
NF-雑音指数
0.3 dB
P1dB-圧縮ポイント
14 dBm
Tags
NE3515, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans FET N-CH 4V 88mA 4-Pin Case S-02 T/R
***i-Key
FET RF HFET 12GHZ 2V 10MA S02
モデル メーカー 説明 ストック 価格
NE3515S02-T1C-A
DISTI # NE3515S02-T1C-ATR-ND
California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Limited Supply - Call
    NE3515S02-T1C-A
    DISTI # NE3515S02-T1C-ACT-ND
    California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      NE3515S02-T1C-A
      DISTI # NE3515S02-T1C-ADKR-ND
      California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        NE3515S02-T1C-A
        DISTI # 551-NE3515S02-T1C-A
        California Eastern Laboratories (CEL)RF JFET Transistors Super Low Noise Pseudomorphic
        RoHS: Compliant
        0
          NE3515S02-T1C-ARenesas Electronics Corporation 
          RoHS: Not Compliant
          7790
          • 1000:$0.6600
          • 500:$0.6900
          • 100:$0.7200
          • 25:$0.7500
          • 1:$0.8100
          画像 モデル 説明
          NE3515S02-T1C-A

          Mfr.#: NE3515S02-T1C-A

          OMO.#: OMO-NE3515S02-T1C-A

          RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02-A

          Mfr.#: NE3515S02-A

          OMO.#: OMO-NE3515S02-A

          RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
          NE3515S02-T1D-A

          Mfr.#: NE3515S02-T1D-A

          OMO.#: OMO-NE3515S02-T1D-A

          RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02-T1D-A

          Mfr.#: NE3515S02-T1D-A

          OMO.#: OMO-NE3515S02-T1D-A-CEL

          RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02-A

          Mfr.#: NE3515S02-A

          OMO.#: OMO-NE3515S02-A-CEL

          RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
          NE3515S02-T1C-A

          Mfr.#: NE3515S02-T1C-A

          OMO.#: OMO-NE3515S02-T1C-A-CEL

          RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02

          Mfr.#: NE3515S02

          OMO.#: OMO-NE3515S02-1190

          ブランドニューオリジナル
          可用性
          ストック:
          Available
          注文中:
          5000
          数量を入力してください:
          NE3515S02-T1C-Aの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
          参考価格(USD)
          単価
          小計金額
          1
          $0.00
          $0.00
          10
          $0.00
          $0.00
          100
          $0.00
          $0.00
          500
          $0.00
          $0.00
          1000
          $0.00
          $0.00
          皮切りに
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