TGF2819-FL

TGF2819-FL
Mfr. #:
TGF2819-FL
メーカー:
Qorvo
説明:
RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
ライフサイクル:
メーカー新製品
データシート:
TGF2819-FL データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
TGF2819-FL 詳しくは
製品属性
属性値
メーカー:
MACOM
製品カテゴリ:
RFJFETトランジスタ
JBoss:
Y
テクノロジー:
GaN Si
包装:
トレイ
ブランド:
MACOM
製品タイプ:
RFJFETトランジスタ
ファクトリーパックの数量:
25
サブカテゴリ:
トランジスタ
Tags
TGF281, TGF28, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC- 3.5 GHz, 100 W, 14 dB, 50 V, GaN
TGF2819-FS/FL RF Power Transistors
Qorvot TGF2819-FS/FL RF Power Transistors provide a greater-than 100W Peak (20W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. Designed using TriQuint's proven TQGaN25HV process, the TGF2819-FS/FL RF Power Transistors offer advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. The optimization features provided by TGF2819-FS/FL may potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Qorvo TGF2819-FS/FL RF Power Transistors are ideal for military radar, civilian radar, professional & military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammers.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
モデル メーカー 説明 ストック 価格
TGF2819-FL
DISTI # 772-TGF2819-FL
QorvoRF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
RoHS: Compliant
1
  • 1:$375.0000
TGF2819-FLPCB4B01
DISTI # 772-TGF2819FLPCB4B01
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$1,050.0000
画像 モデル 説明
TGF2819-FL

Mfr.#: TGF2819-FL

OMO.#: OMO-TGF2819-FL

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FS

Mfr.#: TGF2819-FS

OMO.#: OMO-TGF2819-FS

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF280L

Mfr.#: TGF280L

OMO.#: OMO-TGF280L

Thermal Interface Products Thermal Gap Fill Pad
TGF2819-FS

Mfr.#: TGF2819-FS

OMO.#: OMO-TGF2819-FS-318

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FL

Mfr.#: TGF2819-FL

OMO.#: OMO-TGF2819-FL-318

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FS-EVB1

Mfr.#: TGF2819-FS-EVB1

OMO.#: OMO-TGF2819-FS-EVB1-1152

RF Development Tools DC-3.5GHz 32V GaN Eval Board
TGF2819-FLPCB4B01

Mfr.#: TGF2819-FLPCB4B01

OMO.#: OMO-TGF2819-FLPCB4B01-1152

RF Development Tools
TGF280L

Mfr.#: TGF280L

OMO.#: OMO-TGF280L-LEADER-TECH

ブランドニューオリジナル
可用性
ストック:
Available
注文中:
1000
数量を入力してください:
TGF2819-FLの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$375.00
$375.00
25
$338.44
$8 461.00
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