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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| NE3514S02-T1D-A DISTI # 551-NE3514S02-T1D-A | California Eastern Laboratories (CEL) | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET RoHS: Compliant | 0 | |
| NE3514S02-T1D-A | Renesas Electronics Corporation | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Hetero-junction FET RoHS: Compliant | 50000 |
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| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: NE3514S02-T1C-A(K) OMO.#: OMO-NE3514S02-T1C-A-K--1152 |
RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET |
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Mfr.#: NE3514S02-T1B-A OMO.#: OMO-NE3514S02-T1B-A-1152 |
RF SMALL SIGNAL TRANSISTOR HFET |
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Mfr.#: NE3514S02-T1D-A OMO.#: OMO-NE3514S02-T1D-A-318 |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
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Mfr.#: NE3514S02-T1C-A OMO.#: OMO-NE3514S02-T1C-A-CEL |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
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Mfr.#: NE3514S02-A OMO.#: OMO-NE3514S02-A-CEL |
RF JFET Transistors K Band Super Low Noise Amp N-Ch |
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Mfr.#: NE3514S02 OMO.#: OMO-NE3514S02-1190 |
ブランドニューオリジナル |
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Mfr.#: NE3514S02-T10 OMO.#: OMO-NE3514S02-T10-1190 |
ブランドニューオリジナル |
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Mfr.#: NE3514S02-T1C OMO.#: OMO-NE3514S02-T1C-1190 |
ブランドニューオリジナル |
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Mfr.#: NE3514S02-T1D OMO.#: OMO-NE3514S02-T1D-1190 |
ブランドニューオリジナル |