NE3514S02-T1C-A

NE3514S02-T1C-A
Mfr. #:
NE3514S02-T1C-A
メーカー:
CEL
説明:
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
ライフサイクル:
メーカー新製品
データシート:
NE3514S02-T1C-A データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3514S02-T1C-A DatasheetNE3514S02-T1C-A Datasheet (P4-P6)NE3514S02-T1C-A Datasheet (P7-P8)
ECAD Model:
製品属性
属性値
メーカー
CEL
製品カテゴリ
トランジスタ-FET、MOSFET-シングル
包装
リール
取り付けスタイル
SMD / SMT
パッケージ-ケース
S0-2
テクノロジー
GaAs
トランジスタタイプ
pHEMT
利得
10 dB
Pd-電力損失
165 mW
最高作動温度
+ 125 C
動作周波数
20 GHz
Id-連続-ドレイン-電流
70 mA
Vds-ドレイン-ソース-ブレークダウン-電圧
4 V
フォワード-相互コンダクタンス-最小
55 mS
Vgs-ゲート-ソース-ブレークダウン-電圧
- 3 V
NF-雑音指数
0.75 dB
Tags
NE3514S02-T1C, NE3514S02-T, NE3514, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans FET N-CH 4V 70mA HFET 4-Pin Case S-02 T/R
***et
Trans JFET N-CH 4V 70mA 4-Pin Micro-X
***i-Key
HJ-FET NCH 10DB S02
モデル メーカー 説明 ストック 価格
NE3514S02-T1C-A
DISTI # NE3514S02-T1C-A-ND
California Eastern Laboratories (CEL)HJ-FET NCH 10DB S02
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Limited Supply - Call
    NE3514S02-T1C-ARenesas Electronics Corporation 
    RoHS: Not Compliant
    2000
    • 1000:$0.6200
    • 500:$0.6500
    • 100:$0.6800
    • 25:$0.7100
    • 1:$0.7600
    NE3514S02-T1C-A
    DISTI # 551-NE3514S02-T1C-A
    California Eastern Laboratories (CEL)RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
    RoHS: Compliant
    0
      NE3514S02-T1C-A(K)NEC Electronics GroupRF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET1185
      • 1027:$0.6825
      • 206:$0.7800
      • 1:$1.9500
      NE3514S02-T1C-A(K)NEC Electronics Group 1783
        画像 モデル 説明
        NE3514S02-T1C-A(K)

        Mfr.#: NE3514S02-T1C-A(K)

        OMO.#: OMO-NE3514S02-T1C-A-K--1152

        RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET
        NE3514S02-T1B-A

        Mfr.#: NE3514S02-T1B-A

        OMO.#: OMO-NE3514S02-T1B-A-1152

        RF SMALL SIGNAL TRANSISTOR HFET
        NE3514S02-T1D-A

        Mfr.#: NE3514S02-T1D-A

        OMO.#: OMO-NE3514S02-T1D-A-318

        RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
        NE3514S02-T1C-A

        Mfr.#: NE3514S02-T1C-A

        OMO.#: OMO-NE3514S02-T1C-A-CEL

        RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
        NE3514S02-A

        Mfr.#: NE3514S02-A

        OMO.#: OMO-NE3514S02-A-CEL

        RF JFET Transistors K Band Super Low Noise Amp N-Ch
        NE3514S02

        Mfr.#: NE3514S02

        OMO.#: OMO-NE3514S02-1190

        ブランドニューオリジナル
        NE3514S02-T10

        Mfr.#: NE3514S02-T10

        OMO.#: OMO-NE3514S02-T10-1190

        ブランドニューオリジナル
        NE3514S02-T1C

        Mfr.#: NE3514S02-T1C

        OMO.#: OMO-NE3514S02-T1C-1190

        ブランドニューオリジナル
        NE3514S02-T1D

        Mfr.#: NE3514S02-T1D

        OMO.#: OMO-NE3514S02-T1D-1190

        ブランドニューオリジナル
        可用性
        ストック:
        Available
        注文中:
        3000
        数量を入力してください:
        NE3514S02-T1C-Aの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
        参考価格(USD)
        単価
        小計金額
        1
        $0.93
        $0.93
        10
        $0.88
        $8.83
        100
        $0.84
        $83.70
        500
        $0.79
        $395.25
        1000
        $0.74
        $744.00
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