SI9933CDY-T1-E3

Mfr. #:: SI9933CDY-T1-E3
メーカー:: Vishay
説明:: IGBT Transistors MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V
ライフサイクル:: メーカー新製品
データシート:: SI9933CDY-T1-E3 データシート
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ECAD Model:
詳しくは:: SI9933CDY-T1-E3 詳しくは

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-アレイ

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SI9933CDY-E3

単位重量: 0.006596 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: 8-SOIC (0.154", 3.90mm Width)

テクノロジー: Si

作動温度: -50°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: 8-SO

構成: デュアル

FETタイプ: 2 P-Channel (Dual)

パワーマックス: 3.1W

トランジスタタイプ: 2 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

入力-静電容量-Ciss-Vds: 665pF @ 10V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 4A

Rds-On-Max-Id-Vgs: 58 mOhm @ 4.8A, 4.5V

Vgs-th-Max-Id: 1.4V @ 250μA

ゲートチャージ-Qg-Vgs: 26nC @ 10V

Pd-電力損失: 2 W

最高作動温度: + 150 C

最低作動温度: - 50 C

立ち下がり時間: 13 ns

立ち上がり時間: 50 ns

Vgs-Gate-Source-Voltage: 12 V

Id-連続-ドレイン-電流: 4 A

Vds-ドレイン-ソース-ブレークダウン-電圧: - 20 V

Rds-On-Drain-Source-Resistance: 58 mOhms

トランジスタ-極性: Pチャネル

典型的なターンオフ遅延時間: 29 ns

典型的なターンオン遅延時間: 21 ns

チャネルモード: 強化

Tags: SI9933CDY-T, SI9933CD, SI9933C, SI9933, SI993, SI99, SI9

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI9933CDY-T1-E3 説明

***ure Electronics: Si9933CDY Series Dual P-Channel 20 V 58 mOhm Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET Array Dual P-CH -20V -4A 8-Pin SOIC

***nell: MOSFET, PP CH, 20V, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:3.1W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-50°C to +150°C

SI9933CDY-T1-E3 詳しくは

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

モデル	メーカー	説明	ストック	価格
SI9933CDY-T1-E3 DISTI # V72:2272_09216526	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R RoHS: Compliant	227	100:$0.3264 25:$0.4045 10:$0.4093 1:$0.4844
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3CT-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3313In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3313In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3TR-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.2552
SI9933CDY-T1-E3 DISTI # 25790123	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R RoHS: Compliant	227	100:$0.3264 31:$0.4045
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9933CDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2319 5000:$0.2249 10000:$0.2159 15000:$0.2099 25000:$0.2049
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R (Alt: SI9933CDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI9933CDY-T1-E3 DISTI # 16P3887	Vishay Intertechnologies	Trans MOSFET Array Dual P-CH -20V -4A 8-Pin SOIC - Product that comes on tape, but is not reeled (Alt: 16P3887) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.6400 10:$0.5110 25:$0.4700 50:$0.4290 100:$0.3880 250:$0.3540 500:$0.3200
SI9933CDY-T1-E3 DISTI # 16P3887	Vishay Intertechnologies	DUAL P CHANNEL MOSFET, -20V, SOIC,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes	2222	1:$0.6400 10:$0.5110 25:$0.4700 50:$0.4290 100:$0.3880 250:$0.3540 500:$0.3200 1000:$0.2560
SI9933CDY-T1-E3 DISTI # 781-SI9933CDY-E3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs SO-8 RoHS: Compliant	3592	1:$0.6400 10:$0.5110 100:$0.3880 500:$0.3200 1000:$0.2560 2500:$0.2320
SI9933CDY-T1-E3 DISTI # C1S803603830148	Vishay Intertechnologies	MOSFETs RoHS: Compliant	227	100:$0.3264 25:$0.4045 10:$0.4093
SI9933CDY-T1-E3 DISTI # 2101482	Vishay Intertechnologies	MOSFET, PP CH, 20V, 8SOIC RoHS: Compliant	1894	1:$1.0200 10:$0.8090 100:$0.6150 500:$0.5070 1000:$0.4250
SI9933CDY-T1-E3 DISTI # 2101482	Vishay Intertechnologies	MOSFET, PP CH, 20V, 8SOIC RoHS: Compliant	1840	5:£0.4410 25:£0.2690 100:£0.2670 250:£0.2550 500:£0.2110

画像	モデル	説明
	Mfr.#: SI9933CDY-T1-GE3 OMO.#: OMO-SI9933CDY-T1-GE3	MOSFET -20V Vds 12V Vgs SO-8
	Mfr.#: SI9933CDY-T1-E3 OMO.#: OMO-SI9933CDY-T1-E3	MOSFET -20V Vds 12V Vgs SO-8
	Mfr.#: SI9933CDY-T1-E3 OMO.#: OMO-SI9933CDY-T1-E3-VISHAY	IGBT Transistors MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V
	Mfr.#: SI9933CDY-T1-GE3-CUT TAPE OMO.#: OMO-SI9933CDY-T1-GE3-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: SI9933C OMO.#: OMO-SI9933C-1190	ブランドニューオリジナル
	Mfr.#: SI9933CDY OMO.#: OMO-SI9933CDY-1190	ブランドニューオリジナル
	Mfr.#: SI9933CDY-T1 OMO.#: OMO-SI9933CDY-T1-1190	ブランドニューオリジナル
	Mfr.#: SI9933CDY-T1-GE3 OMO.#: OMO-SI9933CDY-T1-GE3-VISHAY	MOSFET 2P-CH 20V 4A 8-SOIC
	Mfr.#: SI9933CY-T1 OMO.#: OMO-SI9933CY-T1-1190	ブランドニューオリジナル

SI9933CDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes