FDFME3N311ZT

Mfr. #:: FDFME3N311ZT
メーカー:: ON Semiconductor
説明:: MOSFET N-CH 30V 1.8A 6MICROFET
ライフサイクル:: メーカー新製品
データシート:: FDFME3N311ZT データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

メーカー: フェアチャイルド

製品カテゴリ: FET-シングル

包装: リール

単位重量: 0.000889 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: microFET-6

テクノロジー: Si

チャネル数: 1 Channel

構成: ショットキーダイオード付きシングル

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 1.1 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 2.8 ns

立ち上がり時間: 16 ns

Vgs-Gate-Source-Voltage: 12 V

Id-連続-ドレイン-電流: 1.6 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 299 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 35 ns

典型的なターンオン遅延時間: 12 ns

フォワード-相互コンダクタンス-最小: 2.8 S

チャネルモード: 強化

Tags: FDFME, FDFM, FDF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDFME3N311ZT 説明

***Semiconductor: Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.299ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:0.5W ;RoHS Compliant: Yes

***rchild Semiconductor: This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Market price

モデル	メーカー	説明	ストック	価格
FDFME3N311ZT DISTI # FDFME3N311ZTTR-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call	5000:$0.2525
FDFME3N311ZT DISTI # FDFME3N311ZTCT-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDFME3N311ZT DISTI # FDFME3N311ZTDKR-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDFME3N311ZT DISTI # FDFME3N311ZT	ON Semiconductor	Trans MOSFET N-CH 30V 1.8A 6-Pin MicroFET T/R (Alt: FDFME3N311ZT) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€0.4469 10000:€0.3479 20000:€0.2889 30000:€0.2429 50000:€0.2249
FDFME3N311ZT DISTI # 73R3644	ON Semiconductor	MOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:500mW RoHS Compliant: Yes	0	1:$0.6400 25:$0.5270 50:$0.4340 100:$0.3400 250:$0.3170 500:$0.2950 1000:$0.2720
FDFME3N311ZT DISTI # 64R3000	ON Semiconductor	MOSFET Transistor, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes	0	1:$0.2860 5000:$0.2840 10000:$0.2500 25000:$0.2250 50000:$0.2130
FDFME3N311ZT	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	60662	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100
FDFME3N311ZT DISTI # 1813536	ON Semiconductor	MOSFET Transistor RoHS: Compliant	0	5000:£0.2410
FDFME3N311ZT DISTI # 1813536	ON Semiconductor	MOSFET Transistor RoHS: Compliant	0	5000:$0.9780

FDFME3N311ZT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes