BSC072N03LD G

BSC072N03LD G
Mfr. #:
BSC072N03LD G
メーカー:
Infineon Technologies
説明:
Trans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP
ライフサイクル:
メーカー新製品
データシート:
BSC072N03LD G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
製品属性
属性値
メーカー
インフィニオンテクノロジーズ
製品カテゴリ
FET-アレイ
シリーズ
OptiMOS
包装
Digi-ReelR代替パッケージ
パーツエイリアス
BSC072N03LDGATMA1 BSC072N03LDGXT SP000359607
取り付けスタイル
SMD / SMT
商標名
OptiMOS
パッケージ-ケース
8-PowerVDFN
テクノロジー
Si
作動温度
-55°C ~ 150°C (TJ)
取付タイプ
表面実装
チャネル数
1 Channel
サプライヤー-デバイス-パッケージ
PG-TDSON-8 (5.15x6.15)
構成
デュアルデュアルドレイン
FETタイプ
2 N-Channel (Dual)
パワーマックス
57W
トランジスタタイプ
1 N-Channel
Drain-to-Source-Voltage-Vdss
30V
入力-静電容量-Ciss-Vds
3500pF @ 15V
FET機能
ロジックレベルゲート
Current-Continuous-Drain-Id-25°C
11.5A
Rds-On-Max-Id-Vgs
7.2 mOhm @ 20A, 10V
Vgs-th-Max-Id
2.2V @ 250μA
ゲートチャージ-Qg-Vgs
41nC @ 10V
Pd-電力損失
1.5 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
4 ns
立ち上がり時間
4 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
20 A
Vds-ドレイン-ソース-ブレークダウン-電圧
30 V
Rds-On-Drain-Source-Resistance
7.2 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
25 ns
典型的なターンオン遅延時間
6 ns
チャネルモード
強化
Tags
BSC072N03LDG, BSC072N03, BSC072N0, BSC072, BSC07, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 7.2 mOhm 31 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 20A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:57W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:57W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
モデル メーカー 説明 ストック 価格
BSC072N03LDGATMA1
DISTI # V72:2272_06384111
Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP T/R
RoHS: Compliant
4963
  • 3000:$0.5192
  • 1000:$0.5245
  • 500:$0.6420
  • 250:$0.7143
  • 100:$0.7223
  • 25:$0.8941
  • 10:$0.9049
  • 1:$1.0250
BSC072N03LDGATMA1
DISTI # BSC072N03LDGATMA1CT-ND
Infineon Technologies AGMOSFET 2N-CH 30V 11.5A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
437In Stock
  • 1000:$0.6762
  • 500:$0.8566
  • 100:$1.1045
  • 10:$1.3980
  • 1:$1.5800
BSC072N03LDGATMA1
DISTI # BSC072N03LDGATMA1DKR-ND
Infineon Technologies AGMOSFET 2N-CH 30V 11.5A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
437In Stock
  • 1000:$0.6762
  • 500:$0.8566
  • 100:$1.1045
  • 10:$1.3980
  • 1:$1.5800
BSC072N03LDGATMA1
DISTI # BSC072N03LDGATMA1TR-ND
Infineon Technologies AGMOSFET 2N-CH 30V 11.5A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.5821
BSC072N03LD G
DISTI # 30579211
Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP
RoHS: Compliant
5018
  • 100:$0.7803
  • 50:$0.8810
  • 10:$1.2623
  • 9:$3.0345
BSC072N03LDGATMA1
DISTI # 31312147
Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 10000:$0.4896
  • 5000:$0.5088
BSC072N03LDGATMA1
DISTI # 30737654
Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP T/R
RoHS: Compliant
4963
  • 3000:$0.5183
  • 1000:$0.5237
  • 500:$0.6408
  • 250:$0.7129
  • 100:$0.7209
  • 25:$0.8919
  • 15:$0.9027
BSC072N03LD G
DISTI # BSC072N03LD G
Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON T/R (Alt: BSC072N03LD G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 0
    BSC072N03LDGATMA1
    DISTI # BSC072N03LDGATMA1
    Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC072N03LDGATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$0.5189
    • 10000:$0.5169
    • 20000:$0.5159
    • 30000:$0.5149
    • 50000:$0.5139
    BSC072N03LDGATMA1.
    DISTI # 31AC8218
    Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:57W,No. of Pins:8Pins0
    • 1:$0.5080
    • 10000:$0.5060
    • 20000:$0.5050
    • 30000:$0.5040
    • 50000:$0.5020
    BSC072N03LD G
    DISTI # 726-BSC072N03LDG
    Infineon Technologies AGMOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
    RoHS: Compliant
    857
    • 1:$1.3100
    • 10:$1.1200
    • 100:$0.8560
    • 500:$0.7570
    • 1000:$0.5970
    • 5000:$0.5300
    BSC072N03LDGATMA1
    DISTI # 726-BSC072N03LDGATMA
    Infineon Technologies AGMOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
    RoHS: Compliant
    5179
    • 1:$1.3100
    • 10:$1.1200
    • 100:$0.8560
    • 500:$0.7570
    • 1000:$0.5970
    • 5000:$0.5300
    BSC072N03LDGATMA1
    DISTI # 8259216P
    Infineon Technologies AGMOSFET N-CH 11.5A 30V OPTIMOS3 TDSON8EP, RL3240
    • 100:£0.3580
    BSC072N03LDGATMA1
    DISTI # BSC072N03LDGATMA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,11.5A,57W,PG-TDSON-83231
    • 1:$0.6749
    • 5:$0.5854
    • 25:$0.5452
    • 100:$0.4844
    BSC072N03LDGInfineon Technologies AG 1440
      BSC072N03LDGInfineon Technologies AG30V,20A,Dual N-channel power MOSFET,logic level1400
      • 1:$0.9200
      • 100:$0.7700
      • 500:$0.6800
      • 1000:$0.6600
      BSC072N03LDGATMA1
      DISTI # 1775452
      Infineon Technologies AGMOSFET, N CH, 20A, 30V, PG-TDSON-8
      RoHS: Compliant
      4910
      • 5:£0.9880
      • 25:£0.8940
      • 100:£0.6840
      • 250:£0.6440
      • 500:£0.6040
      BSC072N03LD G
      DISTI # C1S322000086425
      Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP T/R
      RoHS: Compliant
      5018
      • 100:$0.6120
      • 50:$0.6910
      • 10:$0.9900
      • 1:$2.3800
      BSC072N03LDGATMA1
      DISTI # C1S322000666355
      Infineon Technologies AGMOSFETs
      RoHS: Compliant
      4963
      • 250:$0.7129
      • 100:$0.7209
      • 25:$0.8919
      • 10:$0.9027
      BSC072N03LDGATMA1
      DISTI # C1S322000401509
      Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP T/R
      RoHS: Compliant
      5000
      • 5000:$0.5180
      画像 モデル 説明
      BSC072N08NS5ATMA1

      Mfr.#: BSC072N08NS5ATMA1

      OMO.#: OMO-BSC072N08NS5ATMA1

      MOSFET N-Ch 80V 74A TDSON-8
      BSC072N03LDGATMA1

      Mfr.#: BSC072N03LDGATMA1

      OMO.#: OMO-BSC072N03LDGATMA1

      MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
      BSC072N03LD G

      Mfr.#: BSC072N03LD G

      OMO.#: OMO-BSC072N03LD-G

      MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
      BSC072N03LD

      Mfr.#: BSC072N03LD

      OMO.#: OMO-BSC072N03LD-1190

      ブランドニューオリジナル
      BSC072N03LD G

      Mfr.#: BSC072N03LD G

      OMO.#: OMO-BSC072N03LD-G-1190

      Trans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP
      BSC072N03LDG

      Mfr.#: BSC072N03LDG

      OMO.#: OMO-BSC072N03LDG-1190

      30V,20A,Dual N-channel power MOSFET,logic level
      BSC072N3S

      Mfr.#: BSC072N3S

      OMO.#: OMO-BSC072N3S-1190

      ブランドニューオリジナル
      BSC072N03LDGATMA1

      Mfr.#: BSC072N03LDGATMA1

      OMO.#: OMO-BSC072N03LDGATMA1-INFINEON-TECHNOLOGIES

      MOSFET 2N-CH 30V 11.5A 8TDSON
      BSC072N03LDGATMA1-CUT TAPE

      Mfr.#: BSC072N03LDGATMA1-CUT TAPE

      OMO.#: OMO-BSC072N03LDGATMA1-CUT-TAPE-1190

      ブランドニューオリジナル
      BSC072N08NS5ATMA1

      Mfr.#: BSC072N08NS5ATMA1

      OMO.#: OMO-BSC072N08NS5ATMA1-INFINEON-TECHNOLOGIES

      RF Bipolar Transistors MOSFET N-Ch 80V 74A TDSON-8
      可用性
      ストック:
      Available
      注文中:
      5000
      数量を入力してください:
      BSC072N03LD Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $0.80
      $0.80
      10
      $0.76
      $7.55
      100
      $0.72
      $71.55
      500
      $0.68
      $337.90
      1000
      $0.64
      $636.00
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