 | |  | |
| PartNumber | BSC072N03LDGATMA1 | BSC072N03LD G | BSC072N025S G |
| Description | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | MOSFET N-CH 25V 40A TDSON-8 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 20 A | 20 A | - |
| Rds On Drain Source Resistance | 6 mOhms, 6 mOhms | 6 mOhms, 6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 41 nC, 41 nC | 41 nC, 41 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 57 W | 57 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 28 S, 28 S | 28 S, 28 S | - |
| Fall Time | 4 ns, 4 ns | 4 ns, 4 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 4 ns, 4 ns | 4 ns, 4 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns, 25 ns | 25 ns, 25 ns | - |
| Typical Turn On Delay Time | 6 ns, 6 ns | 6 ns, 6 ns | - |
| Part # Aliases | BSC072N03LD BSC72N3LDGXT G SP000359607 | BSC072N03LDGATMA1 BSC72N3LDGXT SP000359607 | - |
| Unit Weight | 0.003425 oz | 0.003527 oz | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC072N08NS5ATMA1 | MOSFET N-Ch 80V 74A TDSON-8 | |
| BSC072N03LDGATMA1 | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | ||
| BSC072N03LD G | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | ||
| BSC072N04LDATMA1 | MOSFET TRENCH <= 40V | ||
| BSC072N025S G | MOSFET N-CH 25V 40A TDSON-8 | ||
| BSC072N03LDGATMA1 | MOSFET 2N-CH 30V 11.5A 8TDSON | ||
| BSC072N08NS5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 80V 74A TDSON-8 | ||
| BSC072N025S | ブランドニューオリジナル | ||
| BSC072N03LD | ブランドニューオリジナル | ||
| BSC072N03LD G | Trans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP | ||
| BSC072N03LDG | 30V,20A,Dual N-channel power MOSFET,logic level | ||
| BSC072N3S | ブランドニューオリジナル | ||
| BSC072N03LDGATMA1-CUT TAPE | ブランドニューオリジナル |