IPI086N10N3 G

Mfr. #:: IPI086N10N3 G
メーカー:: Infineon Technologies
説明:: Darlington Transistors MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3
ライフサイクル:: メーカー新製品
データシート:: IPI086N10N3 G データシート
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ECAD Model:

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: OptiMOS 3

包装: チューブ

パーツエイリアス: IPI086N10N3GXK IPI086N10N3GXKSA1 SP000683070

単位重量: 0.073511 oz

商標名: OptiMOS

パッケージ-ケース: TO-262-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 125 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 8 ns

立ち上がり時間: 42 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 80 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 100 V

Rds-On-Drain-Source-Resistance: 8.2 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 31 ns

典型的なターンオン遅延時間: 18 ns

チャネルモード: 強化

Tags: IPI086N10N3G, IPI086N10N3, IPI086, IPI08, IPI0, IPI

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

モデル	メーカー	説明	ストック	価格
IPI086N10N3GXKSA1 DISTI # IPI086N10N3GXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 100V 80A TO262-3 RoHS: Compliant Min Qty: 1 Container: Tube	609In Stock	1000:$0.7219 500:$0.9144 100:$1.1791 10:$1.4920 1:$1.6800
IPI086N10N3GXK DISTI # IPI086N10N3GXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI086N10N3GXKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 1000	1000:$0.5039 2000:$0.4859 3000:$0.4679 5000:$0.4519 10000:$0.4439
IPI086N10N3G DISTI # SP000683070	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin TO-262 Tube (Alt: SP000683070) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€0.9089 10:€0.7089 25:€0.6329 50:€0.5759 100:€0.5589 500:€0.5479 1000:€0.5399
IPI086N10N3GXKSA1 DISTI # 34AC1700	Infineon Technologies AG	MOSFET, N-CH, 100V, 80A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0074ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power RoHS Compliant: Yes	361	1:$1.6800 10:$1.4900 100:$1.1800 500:$0.9140 1000:$0.7210
IPI086N10N3G	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant	15500	1000:$0.5800 500:$0.6100 100:$0.6300 25:$0.6600 1:$0.7100
IPI086N10N3GXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant	800	1000:$0.6500 500:$0.6800 100:$0.7100 25:$0.7400 1:$0.7900
IPI086N10N3 G DISTI # 726-IPI086N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3 RoHS: Compliant	398	1:$1.4400 10:$1.2300 100:$0.9410
IPI086N10N3G	Infineon Technologies AG		2000
IPI086N10N3GXKSA1 DISTI # 8922166	Infineon Technologies AG	MOSFET N-CHANNEL 100V 80A OPTIMOS TO262, PK	340	5:£1.1120 10:£0.8900 100:£0.6800 500:£0.6020 1250:£0.4740
IPI086N10N3GXKSA1 DISTI # IPI086N10N3GXKSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,80A,125W,PG-TO262-3	206	1:$1.2370 3:$1.0655 10:$0.8559 100:$0.7432 1000:$0.6920
IPI086N10N3GXKSA1 DISTI # 2781092	Infineon Technologies AG	MOSFET, N-CH, 100V, 80A, TO-262 RoHS: Compliant	361	5:£0.8900 25:£0.7850 100:£0.6800 250:£0.6410 500:£0.6020
IPI086N10N3GXKSA1 DISTI # 2781092	Infineon Technologies AG	MOSFET, N-CH, 100V, 80A, TO-262 RoHS: Compliant	361	5:$2.5000 25:$2.1800 100:$1.7700 250:$1.5000 500:$1.3000 1000:$1.2300 5000:$1.1600

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