CSD19534KCS

Mfr. #:: CSD19534KCS
説明:: MOSFET N-CH 100V 100A TO220
ライフサイクル:: メーカー新製品
データシート:: CSD19534KCS データシート
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詳しくは:: CSD19534KCS 詳しくは CSD19534KCS Product Details

製品属性
属性値

メーカー: テキサスインスツルメンツ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: CSD19534KCS

包装: チューブ

単位重量: 0.211644 oz

取り付けスタイル: スルーホール

商標名: NexFET

パッケージ-ケース: TO-220-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 118 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 1 ns

立ち上がり時間: 2 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 54 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.4 V

Rds-On-Drain-Source-Resistance: 16.3 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 9 ns

典型的なターンオン遅延時間: 6 ns

Qg-Gate-Charge: 16.4 nC

Tags: CSD19534, CSD1953, CSD19, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD19534KCS 説明

***as Instruments: 100-V, N channel NexFET™ power MOSFET, single TO-220, 16.5 mOhm 3-TO-220 -55 to 175

***ical: Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube

***ment14 APAC: MOSFET, N-CH, 100V, 100A, TO-220AB-3

***ark: Mosfet, N-Ch, 100V, 100A, To-220Ab-3; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0137Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

CSD19534KCS 詳しくは

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD19534KCS DISTI # C1S746203899909	MOSFETs RoHS: Compliant	10	10:$1.1000 1:$2.2900
CSD19534KCS DISTI # 296-38676-5-ND	MOSFET N-CH 100V 100A TO220 RoHS: Not compliant Min Qty: 1 Container: Tube	2452In Stock	5000:$0.5925 2500:$0.6237 1000:$0.6683 500:$0.8465 100:$1.0915 50:$1.2474 10:$1.3810 1:$1.5600
CSD19534KCS DISTI # CSD19534KCS	Trans MOSFET N-CH 100V 100A 3-Pin TO-220 Tube - Rail/Tube (Alt: CSD19534KCS) RoHS: Compliant Min Qty: 650 Container: Tube	Americas - 0	650:$0.5869 750:$0.5589 1400:$0.5399 3250:$0.5219 6500:$0.5079
CSD19534KCS DISTI # CSD19534KCS	Trans MOSFET N-CH 100V 100A 3-Pin TO-220 Tube (Alt: CSD19534KCS) RoHS: Compliant Min Qty: 1000 Container: Tube	Asia - 0
CSD19534KCS DISTI # 41Y0860	MOSFET, N-CH, 100V, 100A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0137ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,MSL:- RoHS Compliant: Yes	649	1:$0.4600 10:$0.4600 100:$0.4600 500:$0.4600 1000:$0.4600 2500:$0.4600
CSD19534KCS DISTI # 45Y4801	MOSFET Transistor, N Channel, 100 A, 100 V, 0.0137 ohm, 10 V, 2.8 V RoHS Compliant: Yes	0
CSD19534KCS	CSD19534KCS 100 V N-Channel NexFET&#153,Power MOSFET	5000	1000:$0.4600 750:$0.5000 500:$0.6100 250:$0.7300 100:$0.7900 25:$0.9100 10:$0.9800 1:$1.0900
CSD19534KCS DISTI # 595-CSD19534KCS	MOSFET 100V N-Channel NexFET Pwr MOSFET RoHS: Compliant	1625	1:$1.3300 10:$1.1300 100:$0.8710 500:$0.7700 1000:$0.6080 2500:$0.5390
CSD19534KCS DISTI # 9009964	NEXFET N-CHANNEL MOSFET 100V 38A TO220, PK	455	5:£1.0380 25:£0.8320 50:£0.8160
CSD19534KCS DISTI # 2473681	MOSFET, N-CH, 100V, 100A, TO-220AB-3 RoHS: Compliant	0	1:$2.1000 10:$1.7900 100:$1.3800 500:$1.2200 1000:$0.9620 2500:$0.8530

画像	モデル	説明
	Mfr.#: CSD19538Q3AT OMO.#: OMO-CSD19538Q3AT	MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 61mOhm 8-VSONP -55 to 150
	Mfr.#: CSD19531Q5AT OMO.#: OMO-CSD19531Q5AT	MOSFET 100V,5.3mOhm,NexFET Power MOSFET
	Mfr.#: CSD19534Q5AT OMO.#: OMO-CSD19534Q5AT	MOSFET 100V, NCh NexFET
	Mfr.#: CSD19533Q5AT OMO.#: OMO-CSD19533Q5AT	MOSFET 100V, 7.8mOhm SON5x6 N-ch NexFET
	Mfr.#: CSD19506KTTT OMO.#: OMO-CSD19506KTTT	MOSFET 80V, N ch NexFET MOSFETG , single D2PAK, 2.3mOhm 3-DDPAK/TO-263 -55 to 175
	Mfr.#: CSD19538Q3A OMO.#: OMO-CSD19538Q3A	MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 61mOhm 8-VSONP -55 to 150
	Mfr.#: CSD19502Q5BT OMO.#: OMO-CSD19502Q5BT-TEXAS-INSTRUMENTS	MOSFET N-CH 80V 100A SON5X6
	Mfr.#: CSD19501KCS OMO.#: OMO-CSD19501KCS-TEXAS-INSTRUMENTS	Darlington Transistors MOSFET 80V N-CH NexFET Pwr MOSFET
	Mfr.#: CSD19534Q5A OMO.#: OMO-CSD19534Q5A-TEXAS-INSTRUMENTS	Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R
	Mfr.#: CSD19535KCS OMO.#: OMO-CSD19535KCS-TEXAS-INSTRUMENTS	MOSFET N-CH 100V TO-220

CSD19534KCS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes