 | | | |
| PartNumber | 2SB1122S-TD-E | 2SB1122S-TC | 2SB1122S-TC , MBRD320RL |
| Description | Bipolar Transistors - BJT BIP PNP 1A 50V | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | - 60 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.18 V | - | - |
| Maximum DC Collector Current | - 2 A | - | - |
| Gain Bandwidth Product fT | 150 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2SB1122 | - | - |
| DC Current Gain hFE Max | 560 | - | - |
| Packaging | Reel | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | - 1 A | - | - |
| DC Collector/Base Gain hfe Min | 140 | - | - |
| Pd Power Dissipation | 1.3 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.001806 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| 2SB1122S-TD-E | Bipolar Transistors - BJT BIP PNP 1A 50V | ||
| 2SB1122S-TC | ブランドニューオリジナル | ||
| 2SB1122S-TC , MBRD320RL | ブランドニューオリジナル | ||
| 2SB1122S-TD-E (BE) | ブランドニューオリジナル | ||
| 2SB1122S-TD-E (SANYO) | ブランドニューオリジナル | ||
| 2SB1122S-TD-E/BE | ブランドニューオリジナル | ||
ON Semiconductor |
2SB1122S-TD-E | Bipolar Transistors - BJT BIP PNP 1A 50V |