2SB815-6-T

2SB815-6-TB-E vs 2SB815-6-TB vs 2SB815-6-TB-EX

 
PartNumber2SB815-6-TB-E2SB815-6-TB2SB815-6-TB-EX
DescriptionBipolar Transistors - BJT BIP PNP 0.7A 15VBIP PNP 0.7A 15V
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseCP-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max15 V--
Collector Base Voltage VCBO- 20 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 15 mV--
Maximum DC Collector Current1.5 A--
Gain Bandwidth Product fT250 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 125 C--
Series2SB815--
DC Current Gain hFE Max400--
PackagingReel--
BrandON Semiconductor--
Continuous Collector Current- 700 uA--
DC Collector/Base Gain hfe Min200--
Pd Power Dissipation200 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000411 oz--
メーカー モデル 説明 RFQ
2SB815-6-TB-E Bipolar Transistors - BJT BIP PNP 0.7A 15V
2SB815-6-TB ブランドニューオリジナル
2SB815-6-TB-EX BIP PNP 0.7A 15V
ON Semiconductor
ON Semiconductor
2SB815-6-TB-E Bipolar Transistors - BJT BIP PNP 0.7A 15V
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