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| PartNumber | 2SD1805G-E | 2SD1805G-TL-E | 2SD1805G-TL |
| Description | Bipolar Transistors - BJT BIP NPN 5A 20V | Bipolar Transistors - BJT BIP NPN 5A 20V | |
| Manufacturer | ON Semiconductor | ON Semiconductor | SANYO |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Single |
| RoHS | Y | Y | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-251-3 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Collector Emitter Voltage VCEO Max | 20 V | 20 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Series | 2SD1805 | 2SD1805 | - |
| Packaging | Bulk | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | 5 A | 5 A | - |
| DC Collector/Base Gain hfe Min | 120 | 120 | - |
| Pd Power Dissipation | 1 W | 15 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 500 | 700 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.139332 oz | - | - |
| Configuration | - | Single | - |
| Collector Base Voltage VCBO | - | 60 V | - |
| Collector Emitter Saturation Voltage | - | 1.5 V | - |
| Gain Bandwidth Product fT | - | 120 MHz | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| DC Current Gain hFE Max | - | 560 | - |