 | |  | |
| PartNumber | BC856BW,115 | BC856BW,135 | BC856BW/DG/B2,115 |
| Description | Bipolar Transistors - BJT TRANS GP TAPE-7 | Bipolar Transistors - BJT TRANS GP TAPE-11 | TRANS GEN PURPOSE SC-70 |
| Manufacturer | Nexperia | Nexperia | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-323-3 | SOT-323-3 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | - 65 V | 65 V | - |
| Collector Base Voltage VCBO | - 80 V | 80 V | - |
| Emitter Base Voltage VEBO | - 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | - 250 mV | - | - |
| Maximum DC Collector Current | - 100 mA | 0.1 A | - |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| DC Current Gain hFE Max | 220 at 2 mA, 5 V | 220 at 2 mA, 5 V | - |
| Height | 1 mm | 1 mm | - |
| Length | 2.2 mm | 2.2 mm | - |
| Packaging | Reel | Reel | - |
| Width | 1.35 mm | 1.35 mm | - |
| Brand | Nexperia | Nexperia | - |
| DC Collector/Base Gain hfe Min | 220 at 2 mA, 5 V | 220 at 2 mA, 5 V | - |
| Pd Power Dissipation | 200 mW | 200 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | BC856BW T/R | /T3 BC856BW | - |
| Unit Weight | 0.000176 oz | 0.000176 oz | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Nexperia |
BC856BW,115 | Bipolar Transistors - BJT TRANS GP TAPE-7 | |
| BC856BW,135 | Bipolar Transistors - BJT TRANS GP TAPE-11 | ||
| BC856BW/DG/B2,115 | TRANS GEN PURPOSE SC-70 | ||
| BC856BW/ZLF | TRANSISTOR | ||
| BC856BW/ZLX | TRANSISTOR | ||
| BC856BW,135 | TRANS PNP 65V 0.1A SOT323 | ||
| BC856BW,115 | Bipolar Transistors - BJT TRANS GP TAPE-7 | ||
| BC856BW/DG/B3X | TRANS GEN PURPOSE SC-70 | ||
| BC856BWT1G | Bipolar Transistors - BJT 100mA 80V PNP | ||
| BC856BW/DG/B3115 | Now Nexperia BC856BW - Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon | ||
| BC856BW-AU_R1_000A1 | PNP TRANSISTOR 65V 0,1A SOT323 | ||
| BC856BW T/R | Bipolar Transistors - BJT TRANS GP TAPE-7 | ||
| BC856BW,115-CUT TAPE | ブランドニューオリジナル | ||
| BC856BWT1G-CUT TAPE | ブランドニューオリジナル | ||
| BC856BW-G | Bipolar Transistors - BJT -80V, -.1A | ||
| BC856BW-7-F | Bipolar Transistors - BJT BIPOLAR TRANSISTOR PNP SOT-323 | ||
| BC856BW | Bipolar (BJT) Single Transistor, PNP, -65 V, 200 MHz, 200 mW, -100 mA, 290 RoHS Compliant: Yes | ||
| BC856BW E6327 | ブランドニューオリジナル | ||
| BC856BW E6327 , SC14S81F | ブランドニューオリジナル | ||
| BC856BW E6327 3B | ブランドニューオリジナル | ||
| BC856BW(3B) | ブランドニューオリジナル | ||
| BC856BW-13-F | PNP TRANSISTOR 65V 0,1A SOT323 | ||
| BC856BW-3BT | ブランドニューオリジナル | ||
| BC856BW-7 | Bipolar Transistors - BJT PNP BIPOLAR | ||
| BC856BW-AU | ブランドニューオリジナル | ||
| BC856BW.115 | Trans GP BJT PNP 65V 0.1A 3-Pin SC-70 T/R - Tape and Reel (Alt: BC856BW,115) | ||
| BC856BW/B | ブランドニューオリジナル | ||
| BC856BW/DG/B2 | Trans GP BJT PNP 65V 0.1A 3-Pin SC-70 T/R (Alt: BC856BW/DG/B2) | ||
| BC856BW115 | ブランドニューオリジナル | ||
| BC856BW135 | ブランドニューオリジナル | ||
| BC856BWB | ブランドニューオリジナル | ||
| BC856BWE6327 | Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon | ||
| BC856BWE6327 , MAX6719UT | ブランドニューオリジナル | ||
| BC856BWE6327 , MAX6719UTWGD3 | ブランドニューオリジナル | ||
| BC856BWT1 | Bipolar Transistors - BJT 100mA 80V PNP | ||
| BC856BWT1,AO3407AL,74F19 | ブランドニューオリジナル | ||
| BC856BWT1G. | ブランドニューオリジナル | ||
Diodes Incorporated |
BC856BW-7-F | Bipolar Transistors - BJT BIPOLAR TRANSISTOR PNP SOT-323 | |
Comchip Technology |
BC856BW-G | Bipolar Transistors - BJT -80V, -.1A | |
ON Semiconductor |
BC856BWT1G | Bipolar Transistors - BJT 100mA 80V PNP | |
Infineon Technologies |
BC856BWE6327BTSA1 | TRANS PNP 65V 0.1A SOT-323 |