 |  | | |
| PartNumber | BLV10 | BLV100 | BLV101 |
| Description | RF Bipolar Transistors RF Transistor | ||
| Manufacturer | Advanced Semiconductor, Inc. | PHILIPS | - |
| Product Category | RF Bipolar Transistors | IC Chips | - |
| RoHS | Y | - | - |
| Transistor Type | Bipolar Power | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 10 | - | - |
| Collector Emitter Voltage VCEO Max | 18 V | - | - |
| Emitter Base Voltage VEBO | 4 V | - | - |
| Continuous Collector Current | 1.5 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | Screw Mount | - | - |
| Package / Case | SOT-123 | - | - |
| Packaging | Tray | - | - |
| Operating Frequency | 175 MHz | - | - |
| Type | RF Bipolar Power | - | - |
| Brand | Advanced Semiconductor, Inc. | - | - |
| Gain Bandwidth Product fT | 950 MHz | - | - |
| Maximum DC Collector Current | 4 A | - | - |
| Pd Power Dissipation | 20 W | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Subcategory | Transistors | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Advanced Semiconductor, Inc. |
BLV10 | RF Bipolar Transistors RF Transistor | |
| BLV100 | ブランドニューオリジナル | ||
| BLV101 | ブランドニューオリジナル | ||
| BLV101A | ブランドニューオリジナル | ||
| BLV101B | ブランドニューオリジナル | ||
| BLV103 | Bipolar Junction Transistor, NPN Type, SOT-171 | ||
| BLV103PH | ブランドニューオリジナル | ||
| BLV108 | ブランドニューオリジナル | ||
| BLV10 | RF Bipolar Transistors RF Transisto |