 | | | |
| PartNumber | BSM50GD120DN2E3226 | BSM50GD120DN2BOSA1 | BSM50GD120DN2E3226BOSA1 |
| Description | IGBT Modules N-CH 1.2KV 50A | IGBT 2 LOW POWER ECONO2-2 | IGBT 2 LOW POWER ECONO2-2 |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Hex | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.5 V | - | - |
| Continuous Collector Current at 25 C | 50 A | - | - |
| Gate Emitter Leakage Current | 200 nA | - | - |
| Pd Power Dissipation | 350 W | - | - |
| Package / Case | EconoPACK 2 | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Height | 17 mm | - | - |
| Length | 107.5 mm | - | - |
| Width | 45.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | BSM50GD120DN2E3226BOSA1 SP000100366 | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSM50GD120DN2E3226 | IGBT Modules N-CH 1.2KV 50A | |
| BSM50GD120DN2BOSA1 | IGBT 2 LOW POWER ECONO2-2 | ||
| BSM50GD120DN2E3226BOSA1 | IGBT 2 LOW POWER ECONO2-2 | ||
| BSM50GD120DN2G | IGBT BSM50GD120DN2GBOSA1 | ||
Infineon Technologies |
BSM50GD120DN2G | IGBT Modules 1200V 50A 3-PHASE | |
| BSM50GD120DN2(6) | ブランドニューオリジナル | ||
| BSM50GD120DN2-B10 | ブランドニューオリジナル | ||
| BSM50GD120DN2-E3256 | ブランドニューオリジナル | ||
| BSM50GD120DN2E | ブランドニューオリジナル | ||
| BSM50GD120DN2E3224 | ブランドニューオリジナル | ||
| BSM50GD120DN2_E3226 | ブランドニューオリジナル | ||
| BSM50GD120DN2E3226 | IGBT Modules N-CH 1.2KV 50A | ||
| BSM50GD120DN2 | IGBT Modules 1200V 50A FL BRIDGE |