 | |  | |
| PartNumber | BSO080P03NS3 G | BSO080P03NS3E G | BSO080P03NS3EGXUMA1 |
| Description | MOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3 | MOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3 | MOSFET P-CH 30V 12A 8DSO |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 14.8 A | 14.8 A | - |
| Rds On Drain Source Resistance | 8 mOhms | 8 mOhms | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.6 W | 2.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.75 mm | 1.75 mm | - |
| Length | 4.9 mm | 4.9 mm | - |
| Series | OptiMOS 3P3 | OptiMOS 3P3 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 3.9 mm | 3.9 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 19 ns | 19 ns | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 47 ns | 47 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 64 ns | 64 ns | - |
| Typical Turn On Delay Time | 16 ns | 16 ns | - |
| Part # Aliases | BSO080P03NS3GXUMA1 BSO8P3NS3GXT SP000472996 | BSO080P03NS3EGXUMA1 BSO8P3NS3EGXT SP000472992 | - |
| Unit Weight | 0.019048 oz | 0.019048 oz | - |
| Qg Gate Charge | - | - 61 nC | - |
| Forward Transconductance Min | - | 44 S | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSO080P03S H | MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P | |
| BSO080P03NS3 G | MOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3 | ||
| BSO080P03NS3E G | MOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3 | ||
| BSO080P03NS3EGXUMA1 | MOSFET P-CH 30V 12A 8DSO | ||
| BSO080P03NS3GXUMA1 | MOSFET P-CH 30V 12A 8DSO | ||
| BSO080P03SNTMA1 | MOSFET P-CH 30V 12.6A 8DSO | ||
| BSO080P03SHXUMA1 | MOSFET P-CH 30V 12.6A 8DSO | ||
Infineon Technologies |
BSO080P03SHXUMA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSO080P03NS | ブランドニューオリジナル | ||
| BSO080P03NS3 | ブランドニューオリジナル | ||
| BSO080P03NS3 G | Trans MOSFET P-CH 30V 14.8A 8-Pin DSO T/R - Bulk (Alt: BSO080P03NS3 G) | ||
| BSO080P03NS3E | ブランドニューオリジナル | ||
| BSO080P03NS3E G | Transistor MOSFET P-CH 30V 14.8A 2-Pin DSO T/R (Alt: BSO080P03NS3E G) | ||
| BSO080P03NS3EG | ブランドニューオリジナル | ||
| BSO080P03NS3EGXT | Trans MOSFET N-CH 30V 12A 8-Pin DSO - Tape and Reel (Alt: BSO080P03NS3EGXUMA1) | ||
| BSO080P03NS3G | Power Field-Effect Transistor, 12A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSO080P03NS3GXUMA1 , TDZ | ブランドニューオリジナル | ||
| BSO080P03S,080P3S | ブランドニューオリジナル | ||
| BSO080P03SH | -30V,8m��,-14.9A P-ch Power MOSFET | ||
| BSO080P03S H | Darlington Transistors MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P |