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CG2H800

CG2H80015D-GP4 vs CG2H80060D-GP4 vs CG2H80030D-GP4

 
PartNumberCG2H80015D-GP4CG2H80060D-GP4CG2H80030D-GP4
DescriptionRF JFET Transistors GaN HEMT Die DC-8.0GHz, 15 WattRF JFET Transistors GaN HEMT Die DC-8.0GHz, 60 WattRF JFET Transistors GaN HEMT Die DC-8.0GHz, 30 Watt
ManufacturerCree, Inc.Cree, Inc.Cree, Inc.
Product CategoryRF JFET TransistorsRF JFET TransistorsRF JFET Transistors
RoHSYYY
Transistor TypeHEMTHEMTHEMT
TechnologyGaNGaNGaN
Gain15 dB15 dB17 dB
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage120 V120 V100 V
Vgs Gate Source Breakdown Voltage- 10 V, 2 V- 10 V, 2 V- 10 V to 2 V
Id Continuous Drain Current3 A3 A0.8 A
Output Power25 W25 W6 W
Maximum Drain Gate Voltage---
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation---
Mounting StyleScrew MountScrew MountSMD/SMT
Package / Case440166440166Die
PackagingTrayTrayGel Pack
Operating FrequencyDC to 6 GHzDC to 6 GHz10 MHz to 18 GHz
BrandWolfspeed / CreeWolfspeed / CreeWolfspeed / Cree
Forward Transconductance Min---
Product TypeRF JFET TransistorsRF JFET TransistorsRF JFET Transistors
Factory Pack Quantity25025010
SubcategoryTransistorsTransistorsTransistors
Vgs th Gate Source Threshold Voltage- 3.8 V- 3.8 V- 3 V
Application---
Configuration--Single
Height--100 um
Length--840 um
Operating Temperature Range---
Product--GaN HEMT
Width--800 um
Gate Source Cutoff Voltage---
Class---
Development Kit---
Fall Time---
NF Noise Figure---
P1dB Compression Point---
Rds On Drain Source Resistance--2.3 Ohms
Rise Time---
Typical Turn Off Delay Time---
メーカー モデル 説明 RFQ
N/A
N/A 		CG2H80015D-GP4 RF JFET Transistors GaN HEMT Die DC-8.0GHz, 15 Watt
CG2H80060D-GP4 RF JFET Transistors GaN HEMT Die DC-8.0GHz, 60 Watt
CG2H80030D-GP4 RF JFET Transistors GaN HEMT Die DC-8.0GHz, 30 Watt
CG2H80015D-GP4 RF DISCRETE
CG2H80030D-GP4 RF MOSFET HEMT 28V DIE
CG2H80060D-GP4 RF DISCRETE
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