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| PartNumber | CGHV22200F | CGHV22200-TB | CGHV22200F/P |
| Description | RF MOSFET Transistors GaN HEMT 1.8-2.2GHz, 200 Watt | EVAL BOARD FOR CGHV22200 | |
| Manufacturer | Cree, Inc. | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | GaN | - | - |
| Id Continuous Drain Current | 1 A | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Gain | 18 dB | - | - |
| Output Power | 200 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | Screw Mount | - | - |
| Package / Case | 440162 | - | - |
| Packaging | Bulk | - | - |
| Operating Frequency | 1.8 GHz to 2.2 GHz | - | - |
| Type | RF Power MOSFET | - | - |
| Brand | Wolfspeed / Cree | - | - |
| Number of Channels | 1 Channel | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | - 10 V, 2 V | - | - |
| Vgs th Gate Source Threshold Voltage | - 3 V | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
N/A |
CGHV22200F | RF MOSFET Transistors GaN HEMT 1.8-2.2GHz, 200 Watt | |
| CGHV22200-TB | EVAL BOARD FOR CGHV22200 | ||
| CGHV22200F | RF MOSFET HEMT 50V 440162 | ||
| CGHV22200F/P | ブランドニューオリジナル |