 | |  | |
| PartNumber | DMN10H170SVT-7 | DMN10H170SVT-13 | DMN10H170SVT |
| Description | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOT-26-6 | TSOT-26-6 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 2.6 A | - | - |
| Rds On Drain Source Resistance | 115 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 9.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.2 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Height | 1 mm | - | - |
| Length | 2.9 mm | - | - |
| Series | DMN10 | DMN10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 1.6 mm | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 42 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Unit Weight | - | 0.000459 oz | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN10H170SVT-7 | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | |
| DMN10H170SVTQ-13 | MOSFET MOSFET BVDSS | ||
| DMN10H170SVT-13 | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | ||
| DMN10H170SVT | ブランドニューオリジナル | ||
| DMN10H170SVT-13 | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | ||
| DMN10H170SVT-7 | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W |