DMN2005L

DMN2005LP4K-7 vs DMN2005LPK-7 vs DMN2005LP4K-7B

 
PartNumberDMN2005LP4K-7DMN2005LPK-7DMN2005LP4K-7B
DescriptionMOSFET 20V 300mAMOSFET 20V 200mA
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseX2-DFN1006-3X1-DFN1006-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current300 mA440 mA-
Rds On Drain Source Resistance650 mOhms1.5 Ohms-
Vgs th Gate Source Threshold Voltage530 mV--
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge---
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation400 mW450 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height0.35 mm0.47 mm-
Length1 mm1 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesDMN2005DMN2005-
Transistor Type1 N-Channel1 N-Channel-
Width0.6 mm0.6 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min40 mS--
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time13.7 ns--
Typical Turn On Delay Time4.06 ns--
メーカー モデル 説明 RFQ
Diodes Incorporated
Diodes Incorporated
DMN2005LP4K-7 MOSFET 20V 300mA
DMN2005LPK-7 MOSFET 20V 200mA
DMN2005LP4K-7 Trans MOSFET N-CH 20V 0.3A Automotive 3-Pin DFN T/R
DMN2005LP4K-7B ブランドニューオリジナル
DMN2005LPK-7 , VT6X1T2R ブランドニューオリジナル
DMN2005LPK-7B ブランドニューオリジナル
DMN2005LPK-7 Darlington Transistors MOSFET 20V 200mA
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