DMN2005U

DMN2005UFG-13 vs DMN2005UFG-7 vs DMN2005UFGQ-13

 
PartNumberDMN2005UFG-13DMN2005UFG-7DMN2005UFGQ-13
DescriptionMOSFET 20V N-Ch Enh Mode FET 12Vgss 1.05WMOSFET 20V N-Ch Enh FET 6495pF 66.8nCMOSFET MOSFET BVDSS: 8V-24V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage20 V20 V20 V
Id Continuous Drain Current18.1 A18.1 A50 A
Rds On Drain Source Resistance8.7 mOhms8.7 mOhms8.7 mOhms
Vgs th Gate Source Threshold Voltage700 mV700 mV400 mV
Vgs Gate Source Voltage12 V12 V12 V
Qg Gate Charge68.8 nC68.8 nC164 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation2.27 W2.27 W2.27 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMN2005DMN2005-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time38 ns38 ns38 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time25.7 ns25.7 ns25.7 ns
Factory Pack Quantity300020003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time114 ns114 ns114 ns
Typical Turn On Delay Time12.4 ns12.4 ns12.4 ns
Unit Weight0.002540 oz0.002540 oz-
Qualification--AEC-Q101
メーカー モデル 説明 RFQ
Diodes Incorporated
Diodes Incorporated
DMN2005UFG-13 MOSFET 20V N-Ch Enh Mode FET 12Vgss 1.05W
DMN2005UFG-7 MOSFET 20V N-Ch Enh FET 6495pF 66.8nC
DMN2005UFGQ-13 MOSFET MOSFET BVDSS: 8V-24V
DMN2005UFGQ-7 MOSFET MOSFET BVDSS: 8V-24V
DMN2005UFG ブランドニューオリジナル
DMN2005UPS-13 MOSFET N-CH 20V 20A POWERDI5060
DMN2005UFG-13 MOSFET 20V N-Ch Enh Mode FET 12Vgss 1.05W
DMN2005UFG-7 MOSFET 20V N-Ch Enh FET 6495pF 66.8nC
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