 |  |  | |
| PartNumber | DMN63D8LDW-13 | DMN63D8LDW | DMN63D8LDW-7 |
| Description | MOSFET 30V DUAL N-CH MOSFET | Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R | |
| Manufacturer | Diodes Incorporated | - | Diodes Incorporated |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Configuration | Dual | - | Dual |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Series | DMN63 | - | DMN63D8 |
| Transistor Type | 2 N-Channel | - | 2 N-Channel |
| Brand | Diodes Incorporated | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.000265 oz | - | 0.000212 oz |
| Package Case | - | - | 6-TSSOP, SC-88, SOT-363 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-363 |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 300mW |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 22pF @ 25V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 220mA |
| Rds On Max Id Vgs | - | - | 2.8 Ohm @ 250mA, 10V |
| Vgs th Max Id | - | - | 1.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 870nC @ 10V |
| Pd Power Dissipation | - | - | 300 mW |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 6.3 ns |
| Rise Time | - | - | 3.2 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 260 mA |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.5 V |
| Rds On Drain Source Resistance | - | - | 2.8 Ohms |
| Typical Turn Off Delay Time | - | - | 12 ns |
| Typical Turn On Delay Time | - | - | 3.3 ns |
| Qg Gate Charge | - | - | 0.87 nC |
| Forward Transconductance Min | - | - | 80 mS |
| Channel Mode | - | - | Enhancement |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN63D8LDWQ-7 | MOSFET Dual N-Ch Enh FET 30Vdss 20Vdss 800mA | |
| DMN63D8LDW-13 | MOSFET 30V DUAL N-CH MOSFET | ||
| DMN63D8LDW | ブランドニューオリジナル | ||
| DMN63D8LDW-13 | Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R | ||
| DMN63D8LDW-7-F | ブランドニューオリジナル | ||
| DMN63D8LDW-7-CUT TAPE | ブランドニューオリジナル | ||
| DMN63D8LDW-7 | Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R |