DMTH10H00 stock, DMTH10H00, DMTH10H005SCT


PartNumber	DMTH10H005SCT	DMTH10H005LCT	DMTH10H009LPS-13
Description	MOSFET MOSFETBVDSS: 61V-100V	MOSFET MOSFET BVDSS: 61V-100V	MOSFET MOSFET BVDSS: 61V-100V
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	-	Y
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	SMD/SMT
Package / Case	TO-220AB-3	TO-220AB-3	PowerDI5060-8
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	100 V	100 V	100 V
Id Continuous Drain Current	140 A	140 A	14 A
Rds On Drain Source Resistance	3.8 mOhms	4 mOhms	12.5 mOhms
Vgs th Gate Source Threshold Voltage	2 V	1.4 V	1.2 V
Vgs Gate Source Voltage	20 V	20 V	20 V
Qg Gate Charge	111.7 nC	114 nC	40.2 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C	+ 175 C
Pd Power Dissipation	187 W	187 W	125 W
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Series	DMTH10H005	DMTH10H005	-
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Brand	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Fall Time	41.6 ns	53.1 ns	14.9 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	30.3 ns	26.9 ns	10.6 ns
Factory Pack Quantity	50	50	2500
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	79.7 ns	83.6 ns	28.3 ns
Typical Turn On Delay Time	29.9 ns	25 ns	5.4 ns
Unit Weight	0.065257 oz	0.063493 oz	-
Packaging	-	Tube	Reel

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DMTH10H00