![]() | ||
| PartNumber | EFC6611R-TF | EFC6611R-A-TF |
| Description | MOSFET NCH+NCH 2.5V DRIVE S | MOSFET NCH+NCH 2.5V DRIVE SERIES |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Configuration | Dual | Single |
| Packaging | Reel | Reel |
| Series | EFC6611R | EFC6611R |
| Brand | ON Semiconductor | ON Semiconductor |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs |
| Mounting Style | - | SMD/SMT |
| Package / Case | - | CSP-6 |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 12 V |
| Id Continuous Drain Current | - | 27 A |
| Rds On Drain Source Resistance | - | 3.2 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 4 V |
| Vgs Gate Source Voltage | - | 8 V |
| Qg Gate Charge | - | 120 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 2.5 W |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 1 N-Channel |
| Forward Transconductance Min | - | 19 S |
| Development Kit | - | - |
| Fall Time | - | 17700 ns |
| Rise Time | - | 570 ns |
| Typical Turn Off Delay Time | - | 38000 ns |
| Typical Turn On Delay Time | - | 80 ns |
| Unit Weight | - | 0.002116 oz |