 | | |
| PartNumber | FDP12N50 | FDP12N50NZ |
| Description | MOSFET 500V N-Channel | MOSFET 500V N-Chan MOSFET UniFET-II |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V |
| Id Continuous Drain Current | 6.9 A | 11.5 A |
| Rds On Drain Source Resistance | 550 mOhms | 460 mOhms |
| Vgs Gate Source Voltage | 30 V | 25 V |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 165 W | 170 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Tradename | UniFET | UniFET |
| Packaging | Tube | Tube |
| Height | 16.3 mm | 16.3 mm |
| Length | 10.67 mm | 10.67 mm |
| Series | FDP12N50 | FDP12N50NZ |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.7 mm | 4.7 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 11.5 S | 12 S |
| Fall Time | 30 ns | 45 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 50 ns | 50 ns |
| Factory Pack Quantity | 1000 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | - |
| Typical Turn On Delay Time | 24 ns | - |
| Unit Weight | 0.063493 oz | 0.063493 oz |
| Vgs th Gate Source Threshold Voltage | - | 5 V |
| Qg Gate Charge | - | 23 nC |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDP12N50 | MOSFET 500V N-Channel | |
| FDP12N50NZ | MOSFET 500V N-Chan MOSFET UniFET-II | ||
ON Semiconductor |
FDP12N50 | MOSFET N-CH 500V 11.5A TO-220 | |
| FDP12N50NZ | MOSFET N-CH 500V 11.5A TO-220 | ||
| FDP12N50,FDP12N50NZ | ブランドニューオリジナル | ||
| FDP12N50F | ブランドニューオリジナル | ||
| FDP12N50T | ブランドニューオリジナル | ||
| FDP12N50U | ブランドニューオリジナル | ||
| FDP12N5ONZ | ブランドニューオリジナル |