FF225R12ME4

FF225R12ME4 vs FF225R12ME4BOSA1 vs FF225R12ME4B11BPSA1

 
PartNumberFF225R12ME4FF225R12ME4BOSA1FF225R12ME4B11BPSA1
DescriptionIGBT Modules IGBT 1200V 225AIGBT MODULE VCES 1200V 225AIGBT MODULE VCES 1200V 225A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.15 V--
Continuous Collector Current at 25 C225 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation1050 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFF225R12ME4BOSA1 SP000405064--
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
FF225R12ME4 IGBT Modules IGBT 1200V 225A
FF225R12ME4_B11 IGBT Modules IGBT Module 225A 1200V
FF225R12ME4PB11BPSA1 IGBT Modules MEDIUM POWER ECONO
FF225R12ME4PBPSA1 IGBT Modules MEDIUM POWER ECONO
FF225R12ME4BOSA1 IGBT MODULE VCES 1200V 225A
FF225R12ME4B11BPSA1 IGBT MODULE VCES 1200V 225A
FF225R12ME4PB11BPSA1 MOD IGBT MED PWR ECONOD-4
FF225R12ME4PBPSA1 EconoDUAL¿3module with Trench/Field stop IGBT4 and Emitter Controlled HE diode and NTC/ pre-applied
FF225R12ME4_B11 IGBT Modules IGBT Module 225A 1200V
FF225R12ME4 IGBT Modules IGBT 1200V 225A
FF225R12ME4 , 1N5366B ブランドニューオリジナル
FF225R12ME4-B11 ブランドニューオリジナル
Top