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| PartNumber | FQH8N100C | FQH8N100 | FQH8N100CONSEMI |
| Description | MOSFET 1000V N-Channel | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 1 kV | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 1.45 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 225 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | QFET | - | - |
| Packaging | Tube | - | - |
| Height | 20.82 mm | - | - |
| Length | 15.87 mm | - | - |
| Series | FQH8N100C | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.82 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 80 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 95 ns | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 122 ns | - | - |
| Typical Turn On Delay Time | 50 ns | - | - |
| Unit Weight | 0.225401 oz | - | - |
