IPB600N25

IPB600N25N3 G vs IPB600N25N3GATMA1 vs IPB600N25N3G

 
PartNumberIPB600N25N3 GIPB600N25N3GATMA1IPB600N25N3G
DescriptionMOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) TO-263
ManufacturerInfineonInfineonINF
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage250 V250 V-
Id Continuous Drain Current25 A25 A-
Rds On Drain Source Resistance51 mOhms51 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge29 nC29 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation136 W136 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
TypeOptiMOS 3 Power-Transistor--
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min24 S24 S-
Fall Time8 ns8 ns-
Product TypeMOSFETMOSFET-
Rise Time10 ns10 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time22 ns22 ns-
Typical Turn On Delay Time10 ns10 ns-
Part # AliasesIPB600N25N3GATMA1 IPB6N25N3GXT SP000676408G IPB600N25N3 IPB6N25N3GXT SP000676408-
Unit Weight0.139332 oz0.068654 oz-
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
IPB600N25N3 G MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
IPB600N25N3GATMA1 MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
IPB600N25N3GATMA1 MOSFET N-CH 250V 25A TO263-3
IPB600N25N3 G Trans MOSFET N-CH 250V 25A 3-Pin TO-263 T/R (Alt: IPB600N25N3 G)
IPB600N25N3G Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) TO-263
IPB600N25N3GS ブランドニューオリジナル
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