 | | | |
| PartNumber | IPI040N06N3GXKSA1 | IPI041N12N3 G | IPI040N06N3GHKSA1 |
| Description | MOSFET N-Ch 60V 90A I2PAK-3 | MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 120 V | - |
| Id Continuous Drain Current | 90 A | 120 A | - |
| Rds On Drain Source Resistance | 3.7 mOhms | 3.2 mOhms | - |
| Configuration | Single | Single | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | Tube |
| Height | 9.45 mm | 9.45 mm | 9.45 mm |
| Length | 10.2 mm | 10.2 mm | 10.2 mm |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.5 mm | 4.5 mm | 4.5 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | G IPI040N06N3 IPI4N6N3GXK SP000680656 | IPI041N12N3GAKSA1 IPI41N12N3GXK SP000652748 | G IPI040N06N3 IPI040N06N3GXK SP000398038 |
| Unit Weight | 0.073511 oz | 0.084199 oz | 0.084199 oz |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 211 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 300 W | - |
| Channel Mode | - | Enhancement | - |
| Forward Transconductance Min | - | 83 S | - |
| Fall Time | - | 21 ns | - |
| Rise Time | - | 52 ns | - |
| Typical Turn Off Delay Time | - | 70 ns | - |
| Typical Turn On Delay Time | - | 35 ns | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI040N06N3GXKSA1 | MOSFET N-Ch 60V 90A I2PAK-3 | |
| IPI041N12N3 G | MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 | ||
| IPI045N10N3 G | MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3 | ||
| IPI041N12N3GAKSA1 | MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 | ||
| IPI045N10N3GXKSA1 | MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3 | ||
| IPI040N06N3GHKSA1 | MOSFET N-CH 60V 90A TO262-3 | ||
| IPI045N10N3GXK | MOSFET N-CH 100V 100A TO262-3 | ||
| IPI040N06N3GXKSA1 | MOSFET N-CH 60V 90A | ||
| IPI041N12N3GAKSA1 | MOSFET N-CH 120V 120A TO262-3 | ||
| IPI045N10N3GXKSA1 | MOSFET N-CH 100V 100A TO262-3 | ||
| IPI04CN10N G | MOSFET N-CH 100V 100A TO262-3 | ||
| IPI04N03LA | MOSFET N-CH 25V 80A TO-262 | ||
Infineon Technologies |
IPI04CN10N G | MOSFET N-Ch 100V 100A I2PAK-3 | |
| IPI040N06N3GHKSA1 | MOSFET MV POWER MOS | ||
| IPI040N06N3G | ブランドニューオリジナル | ||
| IPI040N06N3GXK | Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI040N06N3GXKSA1) | ||
| IPI041N12N3 | ブランドニューオリジナル | ||
| IPI041N12N3G | Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| IPI045N10N | ブランドニューオリジナル | ||
| IPI045N10N3 | ブランドニューオリジナル | ||
| IPI045N10N3 G. | ブランドニューオリジナル | ||
| IPI045N10N3G | Trans MOSFET N-CH 100V 100A 3-Pin TO-262 Tube - Bulk (Alt: IPI045N10N3 G) | ||
| IPI04CN10NG | ブランドニューオリジナル | ||
| IPI040N06N3 G | MOSFET N-Ch 60V 90A I2PAK-3 OptiMOS 3 | ||
| IPI045N10N3 G | IGBT Transistors MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3 |