IXFN20 stock, IXFN20, IXFN200N10P


PartNumber	IXFN200N10P	IXFN200N07	IXFN20N120
Description	MOSFET 200 Amps 100V 0.0075 Rds	MOSFET 70V 200A	MOSFET 20 Amps 1200 V 0.75 Ohms Rds
Manufacturer	IXYS	IXYS	IXYS
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	Chassis Mount	Chassis Mount	Chassis Mount
Package / Case	SOT-227-4	SOT-227-4	SOT-227-4
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	100 V	70 V	1.2 kV
Id Continuous Drain Current	200 A	200 A	20 A
Rds On Drain Source Resistance	7.5 mOhms	6 mOhms	750 mOhms
Vgs Gate Source Voltage	20 V	20 V	30 V
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 150 C	+ 150 C
Pd Power Dissipation	680 W	520 W	780 W
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Tradename	HiPerFET	HyperFET	HyperFET
Packaging	Tube	Tube	Tube
Height	9.6 mm	9.6 mm	9.6 mm
Length	38.23 mm	38.23 mm	38.2 mm
Series	IXFN200N10	IXFN200N07	IXFN20N120
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Width	25.42 mm	25.42 mm	25.07 mm
Brand	IXYS	IXYS	IXYS
Fall Time	90 ns	60 ns	20 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	35 ns	60 ns	45 ns
Factory Pack Quantity	10	10	10
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	150 ns	100 ns	75 ns
Typical Turn On Delay Time	30 ns	30 ns	25 ns
Unit Weight	1.058219 oz	1.058219 oz	1.058219 oz
Forward Transconductance Min	-	80 S	-

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IXFN20