 |  | | |
| PartNumber | MJD45H11T4G | MJD45H11T | MJD45H11T4G-CUT TAPE |
| Description | Bipolar Transistors - BJT 8A 80V 20W PNP | ||
| Manufacturer | ON Semiconductor | STMicroelectronics | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | - | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 5 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 1 V | 1 V | - |
| Maximum DC Collector Current | 8 A | 16 A | - |
| Gain Bandwidth Product fT | 90 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | MJD45H11 | MJD45H11T4 | - |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 8 A | 8 A | - |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Pd Power Dissipation | 20 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.012381 oz | 0.063493 oz | - |
| Package Case | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | D-Pak | - |
| Power Max | - | 20W | - |
| Transistor Type | - | PNP | - |
| Current Collector Ic Max | - | 8A | - |
| Voltage Collector Emitter Breakdown Max | - | 80V | - |
| DC Current Gain hFE Min Ic Vce | - | 40 @ 4A, 1V | - |
| Vce Saturation Max Ib Ic | - | 1V @ 400mA, 8A | - |
| Current Collector Cutoff Max | - | 10μA | - |
| Frequency Transition | - | - | - |
| Pd Power Dissipation | - | 20 W | - |
| Collector Emitter Voltage VCEO Max | - | 80 V | - |
| Collector Base Voltage VCBO | - | 80 V | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| DC Collector Base Gain hfe Min | - | 60 | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| MJD45H11T4G | Bipolar Transistors - BJT 8A 80V 20W PNP | ||
| MJD45H11T | ブランドニューオリジナル | ||
| MJD45H11T4G/MJD44H11 | ブランドニューオリジナル | ||
| MJD45H11T4G/MJD44H11T4G | ブランドニューオリジナル | ||
| MJD45H11T4GM/MJD44H11T4 | ブランドニューオリジナル | ||
| MJD45H11TF-NL | ブランドニューオリジナル | ||
| MJD45H11TF-UL | ブランドニューオリジナル | ||
| MJD45H11TFNL | ブランドニューオリジナル | ||
| MJD45H11TM-NL | ブランドニューオリジナル | ||
| MJD45H11T4GMJD44H11T4G | ブランドニューオリジナル | ||
| MJD45H11T4GT3 | ブランドニューオリジナル | ||
| MJD45H11T4G-CUT TAPE | ブランドニューオリジナル | ||
| MJD45H11TF-CUT TAPE | ブランドニューオリジナル | ||
| MJD45H11TM-CUT TAPE | ブランドニューオリジナル | ||
STMicroelectronics |
MJD45H11T4 | Bipolar Transistors - BJT PNP Gen Pur Switch | |
| MJD45H11T4 | Bipolar Transistors - BJT PNP Gen Pur Switch | ||
ON Semiconductor / Fairchild |
MJD45H11TM | Bipolar Transistors - BJT PNP Epitaxial Sil | |
| MJD45H11TF | Bipolar Transistors - BJT PNP Epitaxial Sil | ||
ON Semiconductor |
MJD45H11TM | TRANS PNP 80V 8A DPAK | |
| MJD45H11T4G | Bipolar Transistors - BJT 8A 80V 20W PNP | ||
| MJD45H11TF | TRANS PNP 80V 8A DPAK |