 | | | |
| PartNumber | MUN5112 | MUN5112DW1 | MUN5112DW1T1 |
| Description | Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Transistors (BJT) - Arrays, Pre-Biased | - | - |
| Series | - | - | - |
| Packaging | Tape & Reel (TR) | - | - |
| Package Case | 6-TSSOP, SC-88, SOT-363 | - | - |
| Mounting Type | Surface Mount | - | - |
| Supplier Device Package | SC-88/SC70-6/SOT-363 | - | - |
| Power Max | 250mW | - | - |
| Transistor Type | 2 PNP - Pre-Biased (Dual) | - | - |
| Current Collector Ic Max | 100mA | - | - |
| Voltage Collector Emitter Breakdown Max | 50V | - | - |
| Resistor Base R1 Ohms | 22k | - | - |
| Resistor Emitter Base R2 Ohms | 22k | - | - |
| DC Current Gain hFE Min Ic Vce | 60 @ 5mA, 10V | - | - |
| Vce Saturation Max Ib Ic | 250mV @ 300μA, 10mA | - | - |
| Current Collector Cutoff Max | 500nA | - | - |
| Frequency Transition | - | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| MUN5112DW1T1G | Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual PNP | ||
| MUN5112T1G | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP | ||
| MUN5112 | ブランドニューオリジナル | ||
| MUN5112DW1 | ブランドニューオリジナル | ||
| MUN5112DW1T1 | Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual | ||
| MUN5112T1 | TRANS PREBIAS PNP 202MW SC70-3 | ||
| MUN5112T1 , DS92LV1212AM | ブランドニューオリジナル | ||
ON Semiconductor |
MUN5112DW1T1G | TRANS 2PNP PREBIAS 0.25W SOT363 | |
| MUN5112T1G | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP |