NJVMJD42CT4 stock, NJVMJD42CT4, NJVMJD42CT4G


PartNumber	NJVMJD42CT4G	NJVMJD42CT4	NJVMJD42CT4G/MJD41C
Description	Bipolar Transistors - BJT SILICON Pwr TRANSISTOR	Trans GP BJT PNP 100V 6A Automotive 3-Pin(2+Tab) DPAK T/R
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Transistors - Bipolar (BJT) - RF	-
RoHS	Y	-	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	DPAK-3	-	-
Transistor Polarity	PNP	PNP	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	100 V	-	-
Collector Base Voltage VCBO	100 V	-	-
Emitter Base Voltage VEBO	5 V	-	-
Maximum DC Collector Current	6 A	6 A	-
Gain Bandwidth Product fT	3 MHz	3 MHz	-
Minimum Operating Temperature	- 65 C	- 65 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	MJD42C	MJD42C	-
DC Current Gain hFE Max	30 at 300 mA, 4 V	30 at 0.3 A at 4 V	-
Height	2.38 mm	-	-
Length	6.73 mm	-	-
Packaging	Reel	Reel	-
Width	6.22 mm	-	-
Brand	ON Semiconductor	-	-
DC Collector/Base Gain hfe Min	30	-	-
Pd Power Dissipation	1750 mW	-	-
Product Type	BJTs - Bipolar Transistors	-	-
Qualification	AEC-Q101	-	-
Factory Pack Quantity	2500	-	-
Subcategory	Transistors	-	-
Part # Aliases	NJVMJD42CT4G-VF01	-	-
Unit Weight	0.012346 oz	0.012346 oz	-
Package Case	-	DPAK-3	-
Pd Power Dissipation	-	1750 mW	-
Collector Emitter Voltage VCEO Max	-	100 V	-
Collector Base Voltage VCBO	-	100 V	-
Emitter Base Voltage VEBO	-	5 V	-
DC Collector Base Gain hfe Min	-	30	-

Search Part Number : "NJVMJD42CT4", Match & Start with "NJVMJD42CT4" - Total : 5

メーカー	モデル	説明
	NJVMJD42CT4G	Bipolar Transistors - BJT SILICON Pwr TRANSISTOR
	NJVMJD42CT4	Trans GP BJT PNP 100V 6A Automotive 3-Pin(2+Tab) DPAK T/R
	NJVMJD42CT4G/MJD41C	ブランドニューオリジナル
	NJVMJD42CT4G	Bipolar Transistors - BJT SILICON Pwr TRANSISTOR
ON Semiconductor	NJVMJD42CT4G-VF01	TRANS PNP 100V 6A DPAK-4

NJVMJD42CT4