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| PartNumber | NJW21194G | NJW21194 | NJW21194G/NJW21193G |
| Description | Bipolar Transistors - BJT 200W NPN | ||
| Manufacturer | ON Semiconductor | ON | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-3P-3 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 250 V | - | - |
| Collector Base Voltage VCBO | 400 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 1.4 V | - | - |
| Maximum DC Collector Current | 16 A | 16 A | - |
| Gain Bandwidth Product fT | 4 MHz | 4 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | NJW21194 | NJW21194 | - |
| DC Current Gain hFE Max | 80 | 20 at 8 A at 5 V | - |
| Height | 18.7 mm | - | - |
| Length | 15.6 mm | - | - |
| Packaging | Tube | Tube | - |
| Width | 4.8 mm | - | - |
| Brand | ON Semiconductor | - | - |
| DC Collector/Base Gain hfe Min | 20 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.238311 oz | 0.238311 oz | - |
| Package Case | - | TO-3P | - |
| Pd Power Dissipation | - | 200 mW | - |
| Collector Emitter Voltage VCEO Max | - | 250 V | - |
| Collector Base Voltage VCBO | - | 400 V | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| DC Collector Base Gain hfe Min | - | 20 | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| NJW21194G | Bipolar Transistors - BJT 200W NPN | ||
| NJW21194 | ブランドニューオリジナル | ||
| NJW21194G/NJW21193G | ブランドニューオリジナル | ||
ON Semiconductor |
NJW21194G | Bipolar Transistors - BJT 200W NPN |