NP36P04SDG-E

NP36P04SDG-E1-AY vs NP36P04SDG-E1 vs NP36P04SDG-E2-AY

 
PartNumberNP36P04SDG-E1-AYNP36P04SDG-E1NP36P04SDG-E2-AY
DescriptionMOSFET MP-3ZK PoTr-MOSFET Low
ManufacturerRenesas ElectronicsNEC-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current36 A--
Rds On Drain Source Resistance17 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation1200 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
ProductMOSFET Small Signal--
Transistor Type1 P-Channel--
Width6.1 mm--
BrandRenesas Electronics--
Fall Time140 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time250 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.011993 oz--
メーカー モデル 説明 RFQ
Renesas Electronics
Renesas Electronics
NP36P04SDG-E1-AY MOSFET MP-3ZK PoTr-MOSFET Low
NP36P04SDG-E1 ブランドニューオリジナル
NP36P04SDG-E1-AY MOSFET P-CH 40V 36A TO-252
NP36P04SDG-E2-AY ブランドニューオリジナル
Top