 |  |  | |
| PartNumber | NTB6412ANT4G | NTB6412ANG | NTB6412NG |
| Description | MOSFET NFET D2PAK 100V 59A 20MO | MOSFET N-CH 100V 58A D2PAK | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 41 A | - | - |
| Rds On Drain Source Resistance | 18.2 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 100 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 167 W | - | - |
| Packaging | Reel | - | - |
| Series | NTB6412AN | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 31 S | - | - |
| Fall Time | 126 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 140 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
ON Semiconductor |
NTB6412ANT4G | MOSFET NFET D2PAK 100V 59A 20MO | |
| NTB6412ANG | MOSFET N-CH 100V 58A D2PAK | ||
| NTB6412ANT4G | IGBT Transistors MOSFET NFET D2PAK 100V 59A 20MO | ||
| NTB6412NG | ブランドニューオリジナル |