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| PartNumber | PSMN2R0-60ES,127 | PSMN2R0-60ES | PSMN2R0-60ES.127 |
| Description | MOSFET N-Ch 60V 2.2 mOhms | Transistor: N-MOSFET, unipolar, 60V, 120A, 338W, I2PAK | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | I2PAK-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 2.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 137 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 338 W | - | - |
| Configuration | Single | - | - |
| Packaging | Tube | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.084199 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Nexperia |
PSMN2R0-60ES,127 | MOSFET N-Ch 60V 2.2 mOhms | |
| PSMN2R0-60ES,127 | IGBT Transistors MOSFET N-Ch 60V 2.2 mOhms | ||
| PSMN2R0-60ES | ブランドニューオリジナル | ||
| PSMN2R0-60ES127 | Now Nexperia PSMN2R0-60ES - Power Field-Effect Transistor, 120A I(D), 60V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| PSMN2R0-60ES.127 | Transistor: N-MOSFET, unipolar, 60V, 120A, 338W, I2PAK |