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| PartNumber | R8010ANX | R801 | R8010 |
| Description | MOSFET 10V Drive Nch MOSFET | ||
| Manufacturer | ROHM Semiconductor | ||
| Product Category | MOSFET | IC Chips | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 560 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 62 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 40 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.8 mm | - | - |
| Length | 15.4 mm | - | - |
| Product | MOSFET | - | - |
| Series | R8010ANX | - | - |
| Transistor Type | 1 N-channel | - | - |
| Type | Power MOSFET | - | - |
| Width | 10.3 mm | - | - |
| Brand | ROHM Semiconductor | - | - |
| Forward Transconductance Min | 2.2 S | - | - |
| Fall Time | 25 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 54 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 97 ns | - | - |
| Typical Turn On Delay Time | 43 ns | - | - |
| Part # Aliases | R8010ANX | - | - |
| Unit Weight | 0.090478 oz | - | - |