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| PartNumber | SI6954ADQ-T1-GE3 | SI6954ADQ-T1-E3 |
| Description | MOSFET 30V Vds 20V Vgs TSSOP-8 | MOSFET 30V Vds 20V Vgs TSSOP-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SI6 | SI6 |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SI6954ADQ-GE3 | SI6954ADQ-E3 |
| Unit Weight | 0.005573 oz | 0.005573 oz |
| Mounting Style | - | SMD/SMT |
| Package / Case | - | TSSOP-8 |
| Number of Channels | - | 2 Channel |
| Transistor Polarity | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 30 V |
| Id Continuous Drain Current | - | 3.4 A |
| Rds On Drain Source Resistance | - | 53 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 16 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 1 W |
| Configuration | - | Dual |
| Channel Mode | - | Enhancement |
| Height | - | 1.2 mm |
| Length | - | 4.4 mm |
| Transistor Type | - | 2 N-Channel |
| Width | - | 3 mm |
| Forward Transconductance Min | - | 10 S |
| Fall Time | - | 8 ns |
| Rise Time | - | 10 ns |
| Typical Turn Off Delay Time | - | 23 ns |
| Typical Turn On Delay Time | - | 12 ns |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI6954ADQ-T1-GE3 | MOSFET 30V Vds 20V Vgs TSSOP-8 | |
| SI6954ADQ-T1-E3 | MOSFET 30V Vds 20V Vgs TSSOP-8 | ||
Vishay |
SI6954ADQ-T1-E3 | MOSFET 2N-CH 30V 3.1A 8TSSOP | |
| SI6954ADQ-T1-GE3 | MOSFET 2N-CH 30V 3.1A 8TSSOP | ||
| SI6954ADQ-T2 | ブランドニューオリジナル |