IGBT MODULE, SINGLE, 1.2KV, 616A, Transistor Polarity:NPN, DC Collector Current:616A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo
IGBT, Ultra Fast, IGBT, 1200 V, 400 A @ degC, 20 V, 390 A @ 25 degC, -40
IGBT, 1 V (Typ.) @ degC VCE, 470 A @ degC, 400 A @ degC, 50 ns
IGBT MODULE, SINGLE, 1.2KV, 616A, Transistor Polarity:NPN, DC Collector Current:616A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo
TRANSISTOR, Transistor Polarity:-, DC Collector Current:598A, Collector Emitter Saturation Voltage Vce(on):1.2kV, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:940mV, No. of Pins:5P
IGBT MODULE, SINGLE, 1.2KV, 616A, Transistor Polarity:NPN, DC Collector Current:616A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo
IGBT MODULE, SINGLE, 1.2KV, 616A, Transistor Polarity:NPN, DC Collector Current:616A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo
TRANSISTOR, Transistor Polarity:-, DC Collector Current:618A, Collector Emitter Saturation Voltage Vce(on):1.2kV, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:800mV, No. of Pins:7P