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| PartNumber | SQD50N06-09L_GE3 | SQD50N06-09L-GE3 | SQD50N06-09L |
| Description | MOSFET 60V 50A 136W AEC-Q101 Qualified | RF Bipolar Transistors MOSFET 60V 50A 136W 9.3mohm @ 10V | |
| Manufacturer | Vishay | VISHAY | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 7.1 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 72 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 62 S | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 27 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Unit Weight | 0.050717 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQD50N06-09L_GE3 | MOSFET 60V 50A 136W AEC-Q101 Qualified | |
| SQD50N06-09L-GE3 | RF Bipolar Transistors MOSFET 60V 50A 136W 9.3mohm @ 10V | ||
| SQD50N06-09L | ブランドニューオリジナル | ||
Vishay |
SQD50N06-09L_GE3 | MOSFET N-CH 60V 50A |